Datasheets
IRFBA32N50KPBF by:

Power Field-Effect Transistor, 32A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-220, 4 PIN

Part Details for IRFBA32N50KPBF by Infineon Technologies AG

Overview of IRFBA32N50KPBF by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Part Details for IRFBA32N50KPBF

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IRFBA32N50KPBF Part Data Attributes:

IRFBA32N50KPBF Infineon Technologies AG
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IRFBA32N50KPBF Infineon Technologies AG Power Field-Effect Transistor, 32A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-220, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 760 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 128 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBA32N50KPBF

This table gives cross-reference parts and alternative options found for IRFBA32N50KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBA32N50KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT6029SLLG Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IRFBA32N50KPBF vs APT6029SLLG
IXFX30N50Q Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IRFBA32N50KPBF vs IXFX30N50Q
APT5015BVRG Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc IRFBA32N50KPBF vs APT5015BVRG
APT5020BLC 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD, TO-247, 3 PIN Microsemi Corporation IRFBA32N50KPBF vs APT5020BLC
IXTH30N45 Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD IXYS Corporation IRFBA32N50KPBF vs IXTH30N45
IXTH30N45S Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN IXYS Corporation IRFBA32N50KPBF vs IXTH30N45S
IXFQ26N50Q Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation IRFBA32N50KPBF vs IXFQ26N50Q
IXTH30N45S Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN Littelfuse Inc IRFBA32N50KPBF vs IXTH30N45S
APT5020SLC Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Advanced Power Technology IRFBA32N50KPBF vs APT5020SLC
APT5015SVFRG Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IRFBA32N50KPBF vs APT5015SVFRG

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