Parametric results for: 71V67803S133BQG8 under SRAMs

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R1LV0216BSB-5SI#B1
Renesas Electronics Corporation
$0.1977 Yes Yes Active 2.0972 Mbit 16 128KX16 3 V 55 ns STANDARD SRAM COMMON 1 1 128000 131.072 k ASYNCHRONOUS 3-STATE YES PARALLEL 10 µA 2 V 25 µA 3.6 V 2.7 V CMOS INDUSTRIAL R-PDSO-G44 3 85 °C -40 °C 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm RENESAS ELECTRONICS CORP TSOP(44) 44 PTSB0044GH compliant 3A991.B.2.A 8542.32.00.41 Renesas Electronics
AP3983BMTR-G1
Diodes Incorporated
$0.2912 Yes Yes Obsolete STANDARD SRAM e3 1 260 30 MATTE TIN DIODES INC compliant EAR99 8542.32.00.41 Diodes Incorporated
AP3983DP7-G1
Diodes Incorporated
$0.2958 Yes Yes Obsolete STANDARD SRAM e3 260 30 MATTE TIN DIODES INC compliant EAR99 8542.32.00.41 Diodes Incorporated
AP3983CMTR-G1
Diodes Incorporated
$0.3143 Yes Obsolete STANDARD SRAM e3 260 MATTE TIN DIODES INC compliant EAR99 8542.32.00.41 Diodes Incorporated
23K256-I/P
Microchip Technology Inc
$0.5770 Yes Yes Active 262.144 kbit 8 32KX8 3 V 20 MHz STANDARD SRAM SEPARATE 1 1 32000 32.768 k SYNCHRONOUS 3-STATE NO SERIAL 4 µA 2.7 V 10 µA 3.6 V 2.7 V CMOS INDUSTRIAL R-PDIP-T8 Not Qualified e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm MICROCHIP TECHNOLOGY INC DIP 8 compliant EAR99 8542.32.00.51 Microchip DIP-8
23LC512-I/SN
Microchip Technology Inc
$0.6270 Yes Active 524.288 kbit 8 64KX8 5 V 20 MHz STANDARD SRAM SEPARATE 1 1 64000 65.536 k SYNCHRONOUS 3-STATE NO SERIAL 10 µA 2.5 V 10 µA 5.5 V 2.5 V CMOS INDUSTRIAL R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC compliant EAR99 8542.32.00.51 Microchip
N25S830HAS22I
onsemi
$0.6523 Yes Active 262.144 kbit 8 32KX8 3 V 20 MHz STANDARD SRAM SEPARATE 1 1, (3 LINE) 32000 32.768 k SYNCHRONOUS 3-STATE SERIAL 4 µA 2.7 V 10 µA 3.6 V 2.7 V CMOS INDUSTRIAL R-PDSO-G8 Not Qualified e3 3 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.91 mm ONSEMI SOIC-8 Narrow Body 8 751AZ compliant EAR99 8542.32.00.41 onsemi 0.150 INCH, GREEN, PLASTIC, SOIC-8
IS62WV6416FBLL-45TLI-TR
Integrated Silicon Solution Inc
$0.6631 Yes Active STANDARD SRAM NOT SPECIFIED NOT SPECIFIED INTEGRATED SILICON SOLUTION INC compliant Integrated Silicon Solution Inc.
23K640-I/SN
Microchip Technology Inc
$0.6705 Yes Yes Active 65.536 kbit 8 8KX8 3 V 20 MHz STANDARD SRAM SEPARATE 1 1 8000 8.192 k SYNCHRONOUS 3-STATE NO SERIAL 4 µA 2.7 V 10 µA 3.6 V 2.7 V CMOS INDUSTRIAL R-PDSO-G8 Not Qualified e3 3 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES MATTE TIN GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC 8 compliant EAR99 8542.32.00.51 Microchip 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8
IS61WV12816EFBLL-10TLI-TR
Integrated Silicon Solution Inc
$0.6794 Yes Active 2.0972 Mbit 16 128KX16 3 V 10 ns STANDARD SRAM COMMON 1 1 128000 131.072 k ASYNCHRONOUS 3-STATE YES PARALLEL 10 mA 2.4 V 35 µA 3.6 V 2.4 V CMOS R-PDSO-G44 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 44 PLASTIC/EPOXY TSOP2 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm INTEGRATED SILICON SOLUTION INC compliant 3A991.B.2.A 8542.32.00.41