Part Details for TPH4R606NH by Toshiba America Electronic Components
Overview of TPH4R606NH by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TPH4R606NH
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER, FET | 30 |
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Buy Now |
Part Details for TPH4R606NH
TPH4R606NH CAD Models
TPH4R606NH Part Data Attributes:
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TPH4R606NH
Toshiba America Electronic Components
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Datasheet
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Compare Parts:
TPH4R606NH
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, S-PDSO-F5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 133 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TPH4R606NH
This table gives cross-reference parts and alternative options found for TPH4R606NH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPH4R606NH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD30N06S2-15XT | Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | TPH4R606NH vs IPD30N06S2-15XT |
| RJK0656DPB-00#J5 | Nch Single Power Mosfet 60V 40A 5.6Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | TPH4R606NH vs RJK0656DPB-00#J5 |
| TPH5R906NH | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | TPH4R606NH vs TPH5R906NH |
| SPD30N06S215NTMA1 | Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | Infineon Technologies AG | TPH4R606NH vs SPD30N06S215NTMA1 |
| RJK0660DPA | Power Field-Effect Transistor | Renesas Electronics Corporation | TPH4R606NH vs RJK0660DPA |
| RJK0660DPA-00-J5A | 40A, 60V, 0.0051ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, WPAK(3), 8 PIN | Renesas Electronics Corporation | TPH4R606NH vs RJK0660DPA-00-J5A |
| RJK0660DPA-00#J5A | Nch Single Power Mosfet 60V 40A 5.1Mohm Wpak, WPAK(3F), /Embossed Tape | Renesas Electronics Corporation | TPH4R606NH vs RJK0660DPA-00#J5A |