Parametric results for: TPH4R606NH under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

133.0 mJ 1

6 hits Apply

DRAIN 1

6 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 1

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

6 hits Apply

Drain Current-Max (ID) (2)

32 A 1 60 A 4

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

11 mΩ 1

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

S-PDSO-F5 1

6 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 6

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

5 1

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 1

6 hits Apply

SQUARE 1

6 hits Apply

SMALL OUTLINE 1

6 hits Apply

Active 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

63 W 4

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply