TPH4R606NH
vs
IPD30N06S2-15XT
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TOSHIBA CORP
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
SMALL OUTLINE, S-PDSO-F5
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
133 mJ
|
240 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
55 V
|
| Drain Current-Max (ID) |
32 A
|
30 A
|
| Drain-source On Resistance-Max |
0.011 Ω
|
0.0147 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-F5
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
96 A
|
120 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
GULL WING
|
| Terminal Position |
DUAL
|
SINGLE
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
1
|
| JEDEC-95 Code |
|
TO-252
|
| Operating Temperature-Max |
|
175 °C
|
|
|
|
Compare TPH4R606NH with alternatives
Compare IPD30N06S2-15XT with alternatives