TPH4R606NH
vs
SPD30N06S215NTMA1
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
TOSHIBA CORP
|
INFINEON TECHNOLOGIES AG
|
Package Description |
SMALL OUTLINE, S-PDSO-F5
|
PLASTIC PACKAGE-3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
133 mJ
|
240 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
55 V
|
Drain Current-Max (ID) |
32 A
|
30 A
|
Drain-source On Resistance-Max |
0.011 Ω
|
0.0147 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-PDSO-F5
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
96 A
|
120 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
GULL WING
|
Terminal Position |
DUAL
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
6
|
1
|
Additional Feature |
|
AVALANCHE RATED
|
JEDEC-95 Code |
|
TO-252
|
|
|
|
Compare TPH4R606NH with alternatives
Compare SPD30N06S215NTMA1 with alternatives