Datasheets
TPH5R906NH by: Toshiba America Electronic Components

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for TPH5R906NH by Toshiba America Electronic Components

Overview of TPH5R906NH by Toshiba America Electronic Components

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for TPH5R906NH

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TPH5R906NH Part Data Attributes

TPH5R906NH Toshiba America Electronic Components
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TPH5R906NH Toshiba America Electronic Components TRANSISTOR POWER, FET, FET General Purpose Power
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 124 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 84 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TPH5R906NH

This table gives cross-reference parts and alternative options found for TPH5R906NH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPH5R906NH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPD30N06S215NTMA1 Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 Infineon Technologies AG TPH5R906NH vs SPD30N06S215NTMA1
RJK0660DPA Power Field-Effect Transistor Renesas Electronics Corporation TPH5R906NH vs RJK0660DPA
RJK0660DPA-00-J5A 40A, 60V, 0.0051ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, WPAK(3), 8 PIN Renesas Electronics Corporation TPH5R906NH vs RJK0660DPA-00-J5A
TPH4R606NH TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components TPH5R906NH vs TPH4R606NH

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