Part Details for TPH5R906NH by Toshiba America Electronic Components
Overview of TPH5R906NH by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for TPH5R906NH
TPH5R906NH CAD Models
TPH5R906NH Part Data Attributes
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TPH5R906NH
Toshiba America Electronic Components
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Datasheet
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TPH5R906NH
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, S-PDSO-F5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 124 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-F5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 84 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for TPH5R906NH
This table gives cross-reference parts and alternative options found for TPH5R906NH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPH5R906NH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPD30N06S215NTMA1 | Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | Infineon Technologies AG | TPH5R906NH vs SPD30N06S215NTMA1 |
RJK0660DPA | Power Field-Effect Transistor | Renesas Electronics Corporation | TPH5R906NH vs RJK0660DPA |
RJK0660DPA-00-J5A | 40A, 60V, 0.0051ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, WPAK(3), 8 PIN | Renesas Electronics Corporation | TPH5R906NH vs RJK0660DPA-00-J5A |
TPH4R606NH | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | TPH5R906NH vs TPH4R606NH |