Part Details for STP20N10L by STMicroelectronics
Overview of STP20N10L by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STP20N10L
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 1 |
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$4.6800 | Buy Now |
Part Details for STP20N10L
STP20N10L CAD Models
STP20N10L Part Data Attributes:
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STP20N10L
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP20N10L
STMicroelectronics
20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 90 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 110 W | |
Power Dissipation-Max (Abs) | 105 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-on Time-Max (ton) | 245 ns |
Alternate Parts for STP20N10L
This table gives cross-reference parts and alternative options found for STP20N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK3600-01SJ | Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | STP20N10L vs 2SK3600-01SJ |
SGSP577 | 20A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | STP20N10L vs SGSP577 |
BUZ21SMD | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | STP20N10L vs BUZ21SMD |
2SK3600-01S | Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | Fuji Electric Co Ltd | STP20N10L vs 2SK3600-01S |
FDD3690 | 100V N-Channel PowerTrench® MOSFET 22A, 64mΩ, 2500-REEL | onsemi | STP20N10L vs FDD3690 |
2SK3150S | 20A, 100V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | STP20N10L vs 2SK3150S |
NTD6415ANLT4G | Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL | onsemi | STP20N10L vs NTD6415ANLT4G |
RFH25N18 | Power Field-Effect Transistor, 25A I(D), 180V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Harris Semiconductor | STP20N10L vs RFH25N18 |
SPP21N10 | Power Field-Effect Transistor, 21A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STP20N10L vs SPP21N10 |
IRFS250B | Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | STP20N10L vs IRFS250B |