Part Details for SPP21N10 by Infineon Technologies AG
Overview of SPP21N10 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SPP21N10
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SPP21N10 - SIPMOS, 21A, 100V, 0.08ohm, N-Channel, Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 355 |
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$0.5702 / $0.6708 | Buy Now |
Part Details for SPP21N10
SPP21N10 CAD Models
SPP21N10 Part Data Attributes
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SPP21N10
Infineon Technologies AG
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Datasheet
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SPP21N10
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP21N10
This table gives cross-reference parts and alternative options found for SPP21N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP21N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK3600-01SJ | Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | SPP21N10 vs 2SK3600-01SJ |
| STP20N10 | 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | SPP21N10 vs STP20N10 |
| BUZ21SMD | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | SPP21N10 vs BUZ21SMD |
| RFK25N18 | Power Field-Effect Transistor, 25A I(D), 180V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | SPP21N10 vs RFK25N18 |
| RFH25N20 | Power Field-Effect Transistor, 25A I(D), 200V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Harris Semiconductor | SPP21N10 vs RFH25N20 |
| RFH25N20 | 25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Intersil Corporation | SPP21N10 vs RFH25N20 |
| STP20N10L | 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | SPP21N10 vs STP20N10L |
| IRFS4228TRLPBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | SPP21N10 vs IRFS4228TRLPBF |
| SUM75N15-18P-E3 | Power Field-Effect Transistor, 75A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | SPP21N10 vs SUM75N15-18P-E3 |
| NTD6415ANLT4G | Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL | onsemi | SPP21N10 vs NTD6415ANLT4G |