Datasheets
FDD3690 by:

100V N-Channel PowerTrench® MOSFET 22A, 64mΩ, 2500-REEL

Part Details for FDD3690 by onsemi

Overview of FDD3690 by onsemi

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Price & Stock for FDD3690

Part # Distributor Description Stock Price Buy
DISTI # 82C2454
Newark Transistor, mosfet, n-Channel,100V V(Br)Dss,22A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FDD3690 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.1000
  • 3,000 $1.0300
  • 6,000 $0.9790
  • 12,000 $0.8810
  • 18,000 $0.8480
  • 30,000 $0.8160
$0.8160 / $1.1000 Buy Now
DISTI # FDD3690CT-ND
DigiKey MOSFET N-CH 100V 22A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 7500
In Stock
  • 1 $1.9400
  • 10 $1.6140
  • 100 $1.2843
  • 500 $1.0867
  • 1,000 $0.9221
  • 2,500 $0.8151
$0.8151 / $1.9400 Buy Now
DISTI # FDD3690
Avnet Americas Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3690) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.9651
  • 5,000 $0.9390
  • 10,000 $0.9129
  • 15,000 $0.8869
  • 20,000 $0.8608
  • 25,000 $0.8347
  • 250,000 $0.8086
$0.8086 / $0.9651 Buy Now
DISTI # FDD3690
Avnet Americas Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3690) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.9651
  • 5,000 $0.9390
  • 10,000 $0.9129
  • 15,000 $0.8869
  • 20,000 $0.8608
  • 25,000 $0.8347
  • 250,000 $0.8086
$0.8086 / $0.9651 Buy Now
DISTI # 512-FDD3690
Mouser Electronics MOSFET 100V NCh PowerTrench RoHS: Compliant 0
  • 1 $1.9400
  • 10 $1.6200
  • 100 $1.2900
  • 250 $1.2600
  • 500 $1.0900
  • 1,000 $0.9210
  • 2,500 $0.8150
$0.8150 / $1.9400 Order Now
Rochester Electronics Power Field-Effect Transistor, 22A, 100V, 0.064ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: Active Min Qty: 1 1796
  • 1 $0.9510
  • 25 $0.9320
  • 100 $0.8939
  • 500 $0.8559
  • 1,000 $0.8083
$0.8083 / $0.9510 Buy Now
DISTI # FDD3690
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.8200
$0.8200 Buy Now
Chip 1 Exchange INSTOCK 3120
RFQ
DISTI # FDD3690
Avnet Silica Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) TO-252AA T/R (Alt: FDD3690) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDD3690
EBV Elektronik Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) TO-252AA T/R (Alt: FDD3690) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDD3690

FDD3690 CAD Models

FDD3690 Part Data Attributes

FDD3690 onsemi
Buy Now Datasheet
Compare Parts:
FDD3690 onsemi 100V N-Channel PowerTrench® MOSFET 22A, 64mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 175 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.064 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 75 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD3690

This table gives cross-reference parts and alternative options found for FDD3690. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD3690, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD3690_NL Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD3690 vs FDD3690_NL
FDD3690 Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD3690 vs FDD3690
Part Number Description Manufacturer Compare
2SK3600-01SJ Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fuji Electric Co Ltd FDD3690 vs 2SK3600-01SJ
STP20N10 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics FDD3690 vs STP20N10
BUZ21SMD Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG FDD3690 vs BUZ21SMD
RFK25N18 Power Field-Effect Transistor, 25A I(D), 180V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor FDD3690 vs RFK25N18
RFH25N20 Power Field-Effect Transistor, 25A I(D), 200V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC Harris Semiconductor FDD3690 vs RFH25N20
RFH25N20 25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC Intersil Corporation FDD3690 vs RFH25N20
STP20N10L 20A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics FDD3690 vs STP20N10L
IRFS4228TRLPBF Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 International Rectifier FDD3690 vs IRFS4228TRLPBF
SUM75N15-18P-E3 Power Field-Effect Transistor, 75A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies FDD3690 vs SUM75N15-18P-E3
NTD6415ANLT4G Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL onsemi FDD3690 vs NTD6415ANLT4G

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