Part Details for 2SK3600-01SJ by Fuji Electric Co Ltd
Overview of 2SK3600-01SJ by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| R5F101SJDFB#X0 | Renesas Electronics Corporation | Low Power, High Function Microcontrollers for General Purpose Applications | |
| R5F101SJAFB#V0 | Renesas Electronics Corporation | Low Power, High Function Microcontrollers for General Purpose Applications | |
| R5F101SJDFB#50 | Renesas Electronics Corporation | Low Power, High Function Microcontrollers for General Purpose Applications |
Part Details for 2SK3600-01SJ
2SK3600-01SJ CAD Models
2SK3600-01SJ Part Data Attributes
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2SK3600-01SJ
Fuji Electric Co Ltd
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Datasheet
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2SK3600-01SJ
Fuji Electric Co Ltd
Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 227 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3600-01SJ
This table gives cross-reference parts and alternative options found for 2SK3600-01SJ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3600-01SJ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPI530N15N3G | Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | 2SK3600-01SJ vs IPI530N15N3G |
| SUM85N15-19-E3 | Power Field-Effect Transistor, 85A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | 2SK3600-01SJ vs SUM85N15-19-E3 |
| NTD6415ANLT4G | Single N-Channel Logic Level Power MOSFET 100V, 23A, 56mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL | onsemi | 2SK3600-01SJ vs NTD6415ANLT4G |
| IRFS4228TRLPBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | 2SK3600-01SJ vs IRFS4228TRLPBF |
| BUZ21SMD | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | 2SK3600-01SJ vs BUZ21SMD |
| IRFP240B | Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | 2SK3600-01SJ vs IRFP240B |
| 2SK3150S | 20A, 100V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK3600-01SJ vs 2SK3150S |
| MTW26N15E | 26A, 150V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | 2SK3600-01SJ vs MTW26N15E |
| SUM85N15-19-E3 | TRANSISTOR 85 A, 150 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | 2SK3600-01SJ vs SUM85N15-19-E3 |
| IRFS4228PBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | 2SK3600-01SJ vs IRFS4228PBF |