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Part Details for STB36NF06LT4 by STMicroelectronics
Overview of STB36NF06LT4 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STB36NF06LT4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-6551-1-ND
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DigiKey | MOSFET N-CH 60V 30A D2PAK Min Qty: 1 Lead time: 39 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.6993 / $1.6700 | Buy Now |
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DISTI #
511-STB36NF06LT4
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Mouser Electronics | MOSFET 60V 0.032Ohm 30A N-Channel RoHS: Compliant | 1250 |
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$0.6990 / $1.6700 | Buy Now |
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STMicroelectronics | N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET RoHS: Compliant Min Qty: 1 | 1250 |
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$0.9100 / $1.6400 | Buy Now |
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Future Electronics | N-Channel 60 V 0.04 Ohm Surface Mount STripFET™ II Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.7100 / $0.7650 | Buy Now |
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DISTI #
STB36NF06LT4
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Avnet Silica | Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) D�PAK T/R (Alt: STB36NF06LT4) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for STB36NF06LT4
STB36NF06LT4 CAD Models
STB36NF06LT4 Part Data Attributes:
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STB36NF06LT4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB36NF06LT4
STMicroelectronics
N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 235 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB36NF06LT4
This table gives cross-reference parts and alternative options found for STB36NF06LT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB36NF06LT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | STB36NF06LT4 vs F10F6N |
| NDP606BE | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | STB36NF06LT4 vs NDP606BE |
| STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | STB36NF06LT4 vs STP9NK65Z |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | STB36NF06LT4 vs IXFH12N100F |
| IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | STB36NF06LT4 vs IPD90N06S306ATMA1 |
| FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STB36NF06LT4 vs FQA30N40 |
| SSP10N60B | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB36NF06LT4 vs SSP10N60B |
| BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | STB36NF06LT4 vs BUK9614-30 |
| FDP8878 | Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | STB36NF06LT4 vs FDP8878 |
| FQPF6N80 | Power Field-Effect Transistor, 3.3A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | STB36NF06LT4 vs FQPF6N80 |