STB36NF06LT4
vs
F10F6N
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Part Package Code
D2PAK
SFM
Package Description
TO-263, D2PAK-3
FLANGE MOUNT, R-PSFM-T3
Pin Count
4
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
235 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
30 A
10 A
Drain-source On Resistance-Max
0.048 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
70 W
Pulsed Drain Current-Max (IDM)
120 A
40 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare STB36NF06LT4 with alternatives
Compare F10F6N with alternatives