STB36NF06LT4 vs F10F6N feature comparison

STB36NF06LT4 STMicroelectronics

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F10F6N Shindengen Electronic Manufacturing Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Part Package Code D2PAK SFM
Package Description TO-263, D2PAK-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 4 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 235 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 30 A 10 A
Drain-source On Resistance-Max 0.048 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 120 A 40 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare STB36NF06LT4 with alternatives

Compare F10F6N with alternatives