STB36NF06LT4 vs IPD90N06S306ATMA1 feature comparison

STB36NF06LT4 STMicroelectronics

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IPD90N06S306ATMA1 Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description TO-263, D2PAK-3 GREEN, TO-252, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 235 mJ 250 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 30 A 90 A
Drain-source On Resistance-Max 0.048 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 120 A 360 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature ULTRA LOW RESISTANCE

Compare STB36NF06LT4 with alternatives

Compare IPD90N06S306ATMA1 with alternatives