Part Details for SI4966DY-T1-E3 by Vishay Siliconix
Overview of SI4966DY-T1-E3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SI4966DY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70026027
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RS | MOSFET, Power, Dual N-Ch, VDSS 20V, RDS(ON) 0.019Ohm, ID+/-7.1A, SO-8,PD 2W, VGS+/-12V | Siliconix / Vishay SI4966DY-T1-E3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$1.5200 / $1.7900 | RFQ |
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Quest Components | 7.1A, 20V, 0.025OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET | 248 |
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$1.6095 / $3.4800 | Buy Now |
Part Details for SI4966DY-T1-E3
SI4966DY-T1-E3 CAD Models
SI4966DY-T1-E3 Part Data Attributes:
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SI4966DY-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4966DY-T1-E3
Vishay Siliconix
Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | LEAD FREE, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 7.1 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4966DY-T1-E3
This table gives cross-reference parts and alternative options found for SI4966DY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4966DY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS6875 | 6A, 20V, 0.03ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 | Rochester Electronics LLC | SI4966DY-T1-E3 vs FDS6875 |
| SI4963DY-T1 | Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4966DY-T1-E3 vs SI4963DY-T1 |
| FDS6875 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4966DY-T1-E3 vs FDS6875 |
| FDS6875_NL | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4966DY-T1-E3 vs FDS6875_NL |
| FDS6890A | 7.5A, 20V, 0.034ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 | Rochester Electronics LLC | SI4966DY-T1-E3 vs FDS6890A |
| SI4963DY | 6.2A, 20V, 0.033ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | SI4966DY-T1-E3 vs SI4963DY |
| FDS6890AF011 | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4966DY-T1-E3 vs FDS6890AF011 |
| SI4966DY-T1-E3 | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 | Vishay Intertechnologies | SI4966DY-T1-E3 vs SI4966DY-T1-E3 |
| FDS9933BZ | -20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL | Fairchild Semiconductor Corporation | SI4966DY-T1-E3 vs FDS9933BZ |
| MMDF4207R2 | 4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Motorola Mobility LLC | SI4966DY-T1-E3 vs MMDF4207R2 |