SI4966DY-T1-E3
vs
MMDF4207R2
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
MOTOROLA INC
|
| Part Package Code |
SOT
|
SOT
|
| Package Description |
LEAD FREE, SO-8
|
SMALL OUTLINE, R-PDSO-G8
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
7.1 A
|
4.8 A
|
| Drain-source On Resistance-Max |
0.025 Ω
|
0.033 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
40 A
|
30 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Avalanche Energy Rating (Eas) |
|
500 mJ
|
| Power Dissipation-Max (Abs) |
|
2 W
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare SI4966DY-T1-E3 with alternatives
Compare MMDF4207R2 with alternatives