Datasheets
SI4963DY by:

6.2A, 20V, 0.033ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8

Part Details for SI4963DY by Rochester Electronics LLC

Overview of SI4963DY by Rochester Electronics LLC

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Part Details for SI4963DY

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SI4963DY Part Data Attributes

SI4963DY Rochester Electronics LLC
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SI4963DY Rochester Electronics LLC 6.2A, 20V, 0.033ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code SOT
Package Description SO-8
Pin Count 8
Reach Compliance Code unknown
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4963DY

This table gives cross-reference parts and alternative options found for SI4963DY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4963DY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4963DY Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4963DY vs SI4963DY
Part Number Description Manufacturer Compare
FDS6890AL86Z Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4963DY vs FDS6890AL86Z
FDS6875 Dual P-Channel 2.5V Specified PowerTrench™ MOSFET -20V, -6A, 30mΩ, 2500-REEL onsemi SI4963DY vs FDS6875
SI4966DY-T1-E3 Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 Vishay Intertechnologies SI4963DY vs SI4966DY-T1-E3
SI4963DY-T1 Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4963DY vs SI4963DY-T1
FDS6890AD84Z Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4963DY vs FDS6890AD84Z
SI4963DY Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4963DY vs SI4963DY
SI4963DY Transistor, Vishay Siliconix SI4963DY vs SI4963DY
FDS6890AL99Z Power Field-Effect Transistor, 7.5A I(D), 20V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation SI4963DY vs FDS6890AL99Z
FDS6875 6A, 20V, 0.03ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC SI4963DY vs FDS6875
MMDF4207R2 4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-06, SOP-8 onsemi SI4963DY vs MMDF4207R2

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