Datasheets
IS42S32800B-6BI by: Integrated Silicon Solution Inc

Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MO-207, BGA-90

Part Details for IS42S32800B-6BI by Integrated Silicon Solution Inc

Overview of IS42S32800B-6BI by Integrated Silicon Solution Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Part Details for IS42S32800B-6BI

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IS42S32800B-6BI Part Data Attributes:

IS42S32800B-6BI Integrated Silicon Solution Inc
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IS42S32800B-6BI Integrated Silicon Solution Inc Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MO-207, BGA-90
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description 8 X 13 MM, 0.80 MM PITCH, MO-207, BGA-90
Pin Count 90
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e0
Length 13 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX32
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.45 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS42S32800B-6BI

This table gives cross-reference parts and alternative options found for IS42S32800B-6BI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32800B-6BI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS42S32800B-6BLI Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc IS42S32800B-6BI vs IS42S32800B-6BLI
Part Number Description Manufacturer Compare
K4S28323LE-HL1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32800B-6BI vs K4S28323LE-HL1H0
MT46H8M32LGB5-5AT:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc IS42S32800B-6BI vs MT46H8M32LGB5-5AT:H
K4M56323LE-ES800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32800B-6BI vs K4M56323LE-ES800
K4M56323LG-HF600 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32800B-6BI vs K4M56323LG-HF600
K4S283233E-FC1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor IS42S32800B-6BI vs K4S283233E-FC1H0
K4M56323LD-EU80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32800B-6BI vs K4M56323LD-EU80
HY5MS5B2LF-S DDR DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS42S32800B-6BI vs HY5MS5B2LF-S
EDS2732CABB-75L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc IS42S32800B-6BI vs EDS2732CABB-75L-E
K4S28323LE-HL750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32800B-6BI vs K4S28323LE-HL750
MT46H8M32LGCM-54:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90 Micron Technology Inc IS42S32800B-6BI vs MT46H8M32LGCM-54:H

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