Datasheets
BSM15GP120 by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

Part Details for BSM15GP120 by Infineon Technologies AG

Overview of BSM15GP120 by Infineon Technologies AG

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Part Details for BSM15GP120

BSM15GP120 CAD Models

BSM15GP120 Part Data Attributes:

BSM15GP120 Infineon Technologies AG
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BSM15GP120 Infineon Technologies AG Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-24
Pin Count 24
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X24
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 465 ns
Turn-on Time-Nom (ton) 121 ns
VCEsat-Max 2.55 V

Alternate Parts for BSM15GP120

This table gives cross-reference parts and alternative options found for BSM15GP120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM15GP120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SKIIP22NAB12I Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 SEMIKRON BSM15GP120 vs SKIIP22NAB12I
SKIIP22NAB12 Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 SEMIKRON BSM15GP120 vs SKIIP22NAB12
SKIIP30NAB12 Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M3, MINISKIIP-22 SEMIKRON BSM15GP120 vs SKIIP30NAB12
BSM25GP120 Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 Infineon Technologies AG BSM15GP120 vs BSM25GP120
SKIIP20NAB12 Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 30 PIN SEMIKRON BSM15GP120 vs SKIIP20NAB12

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