Part Details for SKIIP20NAB12 by SEMIKRON
Overview of SKIIP20NAB12 by SEMIKRON
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SKIIP20NAB12
SKIIP20NAB12 CAD Models
SKIIP20NAB12 Part Data Attributes
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SKIIP20NAB12
SEMIKRON
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Datasheet
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SKIIP20NAB12
SEMIKRON
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 30 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
Package Description | FLANGE MOUNT, R-XUFM-X30 | |
Pin Count | 30 | |
Manufacturer Package Code | CASE M2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 16 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X30 | |
Number of Elements | 7 | |
Number of Terminals | 30 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 460 ns | |
Turn-on Time-Nom (ton) | 105 ns | |
VCEsat-Max | 3.2 V |
Alternate Parts for SKIIP20NAB12
This table gives cross-reference parts and alternative options found for SKIIP20NAB12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKIIP20NAB12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSM15GP120 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 | Infineon Technologies AG | SKIIP20NAB12 vs BSM15GP120 |
SKIIP22NAB12 | Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 | SEMIKRON | SKIIP20NAB12 vs SKIIP22NAB12 |
SKIIP21NAB12I | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 27 PIN | SEMIKRON | SKIIP20NAB12 vs SKIIP21NAB12I |
SKIIP30NAB12 | Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M3, MINISKIIP-22 | SEMIKRON | SKIIP20NAB12 vs SKIIP30NAB12 |