Datasheets
SKIIP30NAB12 by: SEMIKRON

Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M3, MINISKIIP-22

Part Details for SKIIP30NAB12 by SEMIKRON

Overview of SKIIP30NAB12 by SEMIKRON

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Part Details for SKIIP30NAB12

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SKIIP30NAB12 Part Data Attributes

SKIIP30NAB12 SEMIKRON
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SKIIP30NAB12 SEMIKRON Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M3, MINISKIIP-22
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description SPECIAL SHAPE, R-XXSS-X22
Pin Count 22
Manufacturer Package Code CASE M3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 33 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XXSS-X22
Number of Elements 7
Number of Terminals 22
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SPECIAL SHAPE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UNSPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 470 ns
Turn-on Time-Nom (ton) 140 ns
VCEsat-Max 3 V

Alternate Parts for SKIIP30NAB12

This table gives cross-reference parts and alternative options found for SKIIP30NAB12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKIIP30NAB12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM15GP120 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 Infineon Technologies AG SKIIP30NAB12 vs BSM15GP120
SKIIP22NAB12 Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 SEMIKRON SKIIP30NAB12 vs SKIIP22NAB12
SKIIP21NAB12I Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 27 PIN SEMIKRON SKIIP30NAB12 vs SKIIP21NAB12I

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