Part Details for SKIIP30NAB12 by SEMIKRON
Overview of SKIIP30NAB12 by SEMIKRON
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SKIIP30NAB12
SKIIP30NAB12 CAD Models
SKIIP30NAB12 Part Data Attributes
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SKIIP30NAB12
SEMIKRON
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Datasheet
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SKIIP30NAB12
SEMIKRON
Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M3, MINISKIIP-22
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
Package Description | SPECIAL SHAPE, R-XXSS-X22 | |
Pin Count | 22 | |
Manufacturer Package Code | CASE M3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 33 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XXSS-X22 | |
Number of Elements | 7 | |
Number of Terminals | 22 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SPECIAL SHAPE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UNSPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 470 ns | |
Turn-on Time-Nom (ton) | 140 ns | |
VCEsat-Max | 3 V |
Alternate Parts for SKIIP30NAB12
This table gives cross-reference parts and alternative options found for SKIIP30NAB12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKIIP30NAB12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSM15GP120 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 | Infineon Technologies AG | SKIIP30NAB12 vs BSM15GP120 |
SKIIP22NAB12 | Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 | SEMIKRON | SKIIP30NAB12 vs SKIIP22NAB12 |
SKIIP21NAB12I | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 27 PIN | SEMIKRON | SKIIP30NAB12 vs SKIIP21NAB12I |