Part Details for W981616AH-8 by Winbond Electronics Corp
Overview of W981616AH-8 by Winbond Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for W981616AH-8
W981616AH-8 CAD Models
W981616AH-8 Part Data Attributes:
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W981616AH-8
Winbond Electronics Corp
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Datasheet
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W981616AH-8
Winbond Electronics Corp
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.1 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for W981616AH-8
This table gives cross-reference parts and alternative options found for W981616AH-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W981616AH-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V161610DTC-7 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | W981616AH-8 vs HY57V161610DTC-7 |
| MB81F161622C-80FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | W981616AH-8 vs MB81F161622C-80FN |
| MB81F161622B-103FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | W981616AH-8 vs MB81F161622B-103FN |
| VG3617161ET-7 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | W981616AH-8 vs VG3617161ET-7 |
| KM416S1021CT-G8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | W981616AH-8 vs KM416S1021CT-G8 |
| UPD4516161AG5-A10L-9NF | IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC | Renesas Electronics Corporation | W981616AH-8 vs UPD4516161AG5-A10L-9NF |
| MT48LC1M16A1TG-8ASIT | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | W981616AH-8 vs MT48LC1M16A1TG-8ASIT |
| HY57V161610DLTC-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | W981616AH-8 vs HY57V161610DLTC-8 |
| UPD4516161AG5-A10-9NF | 1MX16 SYNCHRONOUS DRAM, 6ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Renesas Electronics Corporation | W981616AH-8 vs UPD4516161AG5-A10-9NF |
| MB81F161622B-70FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | W981616AH-8 vs MB81F161622B-70FN |