Datasheets
HY57V161610DTC-7 by: SK Hynix Inc

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

Part Details for HY57V161610DTC-7 by SK Hynix Inc

Overview of HY57V161610DTC-7 by SK Hynix Inc

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Price & Stock for HY57V161610DTC-7

Part # Distributor Description Stock Price Buy
Bristol Electronics   383
RFQ
Bristol Electronics   160
RFQ
Bristol Electronics   32
RFQ
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 71
  • 1 $7.5000
  • 6 $3.7500
  • 54 $3.2500
$3.2500 / $7.5000 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 564
  • 1 $7.5000
  • 217 $4.1250
  • 486 $3.7500
$3.7500 / $7.5000 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 38
  • 1 $7.5000
  • 5 $5.5000
  • 15 $5.0000
$5.0000 / $7.5000 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 12
  • 1 $7.5000
  • 2 $6.2500
  • 5 $5.5000
$5.5000 / $7.5000 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 655
  • 1 $6.0753
  • 268 $3.3414
  • 600 $3.0377
$3.0377 / $6.0753 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 81
  • 1 $7.5000
  • 15 $5.0000
  • 51 $4.6250
$4.6250 / $7.5000 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 65
  • 1 $7.5000
  • 15 $5.0000
  • 51 $4.6250
$4.6250 / $7.5000 Buy Now
Quest Components SDRAM, 1M x 16, 50 Pin, Plastic, TSOP 56
  • 1 $7.5000
  • 15 $5.0000
  • 51 $4.6250
$4.6250 / $7.5000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 186
  • 1 $5.3800
  • 100 $4.0400
  • 1,000 $3.5000
$3.5000 / $5.3800 Buy Now

Part Details for HY57V161610DTC-7

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HY57V161610DTC-7 Part Data Attributes:

HY57V161610DTC-7 SK Hynix Inc
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HY57V161610DTC-7 SK Hynix Inc Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description TSOP2, TSOP50,.46,32
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G50
Length 20.968 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.11 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for HY57V161610DTC-7

This table gives cross-reference parts and alternative options found for HY57V161610DTC-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V161610DTC-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S161622H-UC800 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50 Samsung Semiconductor HY57V161610DTC-7 vs K4S161622H-UC800
KM416S1020CT-G8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HY57V161610DTC-7 vs KM416S1020CT-G8
UPD4516161AG5-A10L-9NF Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc HY57V161610DTC-7 vs UPD4516161AG5-A10L-9NF
UPD4516161AG5-A80-9NF 1MX16 SYNCHRONOUS DRAM, 6ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Renesas Electronics Corporation HY57V161610DTC-7 vs UPD4516161AG5-A80-9NF
UPD4516161AG5-A10L-9NF Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics America Inc HY57V161610DTC-7 vs UPD4516161AG5-A10L-9NF
HY57V161610DLTC-10P Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DTC-7 vs HY57V161610DLTC-10P
HY57V161610CTC-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DTC-7 vs HY57V161610CTC-8
K4S161622D-TP10 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HY57V161610DTC-7 vs K4S161622D-TP10
VG3616161DT-7 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY57V161610DTC-7 vs VG3616161DT-7
HY57V161610CLTC-10S Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DTC-7 vs HY57V161610CLTC-10S
Part Number Description Manufacturer Compare
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc HY57V161610DTC-7 vs IS42S16100B-6T
IS42VS16100D-10T Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc HY57V161610DTC-7 vs IS42VS16100D-10T
AS4LC1M16S0-12TC Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Alliance Semiconductor Corporation HY57V161610DTC-7 vs AS4LC1M16S0-12TC
MSM56V16160DH-15TS-K Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 LAPIS Semiconductor Co Ltd HY57V161610DTC-7 vs MSM56V16160DH-15TS-K
HY57V161610DTC-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DTC-7 vs HY57V161610DTC-8
M12L16161A-5TIG Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 Elite Semiconductor Memory Technology Inc HY57V161610DTC-7 vs M12L16161A-5TIG
KM416S1120DT-F7 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HY57V161610DTC-7 vs KM416S1120DT-F7
K4S161622D-TC80 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HY57V161610DTC-7 vs K4S161622D-TC80
VG3617161DT-6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY57V161610DTC-7 vs VG3617161DT-6
HY57V161610ETP-5I Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 SK Hynix Inc HY57V161610DTC-7 vs HY57V161610ETP-5I

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