Part Details for MB81F161622B-103FN by FUJITSU Semiconductor Limited
Overview of MB81F161622B-103FN by FUJITSU Semiconductor Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MB81F161622B-103FN
MB81F161622B-103FN CAD Models
MB81F161622B-103FN Part Data Attributes:
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MB81F161622B-103FN
FUJITSU Semiconductor Limited
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Datasheet
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MB81F161622B-103FN
FUJITSU Semiconductor Limited
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU SEMICONDUCTOR AMERICA INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G50 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MB81F161622B-103FN
This table gives cross-reference parts and alternative options found for MB81F161622B-103FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F161622B-103FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UPD4516161AG5-A10-9NF | 1MX16 SYNCHRONOUS DRAM, 6ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Renesas Electronics Corporation | MB81F161622B-103FN vs UPD4516161AG5-A10-9NF |
| MB81F161622B-75FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | MB81F161622B-103FN vs MB81F161622B-75FN |
| MT48LC1M16A1TG-8ASIT | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | MB81F161622B-103FN vs MT48LC1M16A1TG-8ASIT |
| VG3617161ET-7 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | MB81F161622B-103FN vs VG3617161ET-7 |
| HY57V161610CLTC-10S | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | MB81F161622B-103FN vs HY57V161610CLTC-10S |
| MB81F161622C-80FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | MB81F161622B-103FN vs MB81F161622C-80FN |
| W981616AH-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Winbond Electronics Corp | MB81F161622B-103FN vs W981616AH-8 |
| MB81F161622C-70FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | MB81F161622B-103FN vs MB81F161622C-70FN |
| K4S161622H-TC100 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, TSOP2-50 | Samsung Semiconductor | MB81F161622B-103FN vs K4S161622H-TC100 |
| UPD4516161AG5-A80L-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | MB81F161622B-103FN vs UPD4516161AG5-A80L-9NF |