Part Details for NTE16002 by NTE Electronics Inc
Overview of NTE16002 by NTE Electronics Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Industrial Automation
Computing and Data Storage
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Price & Stock for NTE16002
Part # | Distributor | Description | Stock | Price | Buy | |
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Onlinecomponents.com | Transistor NPN Silicon 65V IC=3A TO-60 Case Po=13.5 Watt 175 Mhz RF Power AMP/driver |
1 In Stock |
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$47.9700 / $70.9300 | Buy Now |
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Bristol Electronics | 1 |
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RFQ | ||
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Quest Components | 1 |
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$42.9000 | Buy Now | |
DISTI #
NTE16002
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TME | Transistor: NPN, bipolar, RF, 40V, 3A, 23W, TO60, Pout: 13.5W Min Qty: 1 | 0 |
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$53.3000 / $74.6000 | RFQ |
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Master Electronics | Transistor NPN Silicon 65V IC=3A TO-60 Case Po=13.5 Watt 175 Mhz RF Power AMP/driver |
1 In Stock |
|
$47.9700 / $70.9300 | Buy Now |
Part Details for NTE16002
NTE16002 CAD Models
NTE16002 Part Data Attributes:
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NTE16002
NTE Electronics Inc
Buy Now
Datasheet
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Compare Parts:
NTE16002
NTE Electronics Inc
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Package Description | POST/STUD MOUNT, O-MUPM-P3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 3 A | |
Collector-Base Capacitance-Max | 20 pF | |
Collector-Emitter Voltage-Max | 40 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 5 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-MUPM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 23 W | |
Power Dissipation-Max (Abs) | 23 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | UPPER | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 400 MHz |
Alternate Parts for NTE16002
This table gives cross-reference parts and alternative options found for NTE16002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE16002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MRF325 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | Motorola Semiconductor Products | NTE16002 vs MRF325 |
SD1214-12 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M104, 4 PIN | Microsemi Corporation | NTE16002 vs SD1214-12 |
2SC2104 | TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | Toshiba America Electronic Components | NTE16002 vs 2SC2104 |
BLY91C/01 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | NXP Semiconductors | NTE16002 vs BLY91C/01 |
NTE475 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE16002 vs NTE475 |
BLV897 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-324B, 5 PIN, BIP RF Power | NXP Semiconductors | NTE16002 vs BLV897 |
NTE350F | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE16002 vs NTE350F |
NTE363 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE16002 vs NTE363 |
BLY87C/01 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | NXP Semiconductors | NTE16002 vs BLY87C/01 |
NTE350 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T72H, 4 PIN | NTE Electronics Inc | NTE16002 vs NTE350 |