Parametric results for: NTE16002 under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 1

2 hits Apply

Collector Current-Max (IC) (1)

3 A 1

2 hits Apply

20 pF 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

40 V 1

2 hits Apply

Configuration (1)

SINGLE 1

2 hits Apply

DC Current Gain-Min (hFE) (1)

5.0 1

2 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

2 hits Apply

O-MUPM-P3 1

2 hits Apply

Manufacturer (1)

NTE Electronics Inc 2

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

METAL 1

2 hits Apply

ROUND 1

2 hits Apply

POST/STUD MOUNT 1

2 hits Apply

Active 2

2 hits Apply

Polarity/Channel Type (1)

NPN 1

2 hits Apply

23 W 1

2 hits Apply

23 W 1

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply

Transition Frequency-Nom (fT) (1)

400 MHz 1

2 hits Apply