Datasheets
MMBT5551_R1_00001 by:

Small Signal Bipolar Transistor,

Part Details for MMBT5551_R1_00001 by PanJit Semiconductor

Overview of MMBT5551_R1_00001 by PanJit Semiconductor

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Applications Consumer Electronics Education and Research Industrial Automation Audio and Video Systems Electronic Manufacturing

Price & Stock for MMBT5551_R1_00001

Part # Distributor Description Stock Price Buy
DISTI # 241-MMBT5551R100001
Mouser Electronics Bipolar Transistors - BJT NPNHIGHVOLTAGETRANSISTOR VCE160V IC600mA SOT-23 RoHS: Compliant 8839
  • 1 $0.2100
  • 10 $0.1480
  • 100 $0.0600
  • 1,000 $0.0420
  • 3,000 $0.0330
  • 9,000 $0.0270
  • 24,000 $0.0260
  • 45,000 $0.0240
  • 99,000 $0.0210
$0.0210 / $0.2100 Buy Now
NAC NPNHIGHVOLTAGETRANSISTOR VCE160V IC600mA SOT-23 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel 2491
  • 1,500 $0.0200
  • 3,000 $0.0180
$0.0180 / $0.0200 Buy Now

Part Details for MMBT5551_R1_00001

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MMBT5551_R1_00001 Part Data Attributes:

MMBT5551_R1_00001 PanJit Semiconductor
Buy Now Datasheet
Compare Parts:
MMBT5551_R1_00001 PanJit Semiconductor Small Signal Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer PANJIT INTERNATIONAL INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer PANJIT
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for MMBT5551_R1_00001

This table gives cross-reference parts and alternative options found for MMBT5551_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBT5551S62Z Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Fairchild Semiconductor Corporation MMBT5551_R1_00001 vs MMBT5551S62Z
PMBT5551 Small Signal Bipolar Transistor Nexperia MMBT5551_R1_00001 vs PMBT5551
MMBT5551L99Z Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Fairchild Semiconductor Corporation MMBT5551_R1_00001 vs MMBT5551L99Z
CMPT5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Central Semiconductor Corp MMBT5551_R1_00001 vs CMPT5551
PMBT5551,215 PMBT5551 - NPN high-voltage transistor@en-us TO-236 3-Pin Nexperia MMBT5551_R1_00001 vs PMBT5551,215
MMBT5551 600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number, 3000-REEL onsemi MMBT5551_R1_00001 vs MMBT5551
PMBT5551T/R Small Signal Bipolar Transistor Nexperia MMBT5551_R1_00001 vs PMBT5551T/R
933821840215 Small Signal Bipolar Transistor Nexperia MMBT5551_R1_00001 vs 933821840215
CMPT5551TR Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Central Semiconductor Corp MMBT5551_R1_00001 vs CMPT5551TR
CMPT5551TR13 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Central Semiconductor Corp MMBT5551_R1_00001 vs CMPT5551TR13
Part Number Description Manufacturer Compare
2N5551D27Z Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Fairchild Semiconductor Corporation MMBT5551_R1_00001 vs 2N5551D27Z
PMBT5551T/R Small Signal Bipolar Transistor Nexperia MMBT5551_R1_00001 vs PMBT5551T/R
2N5551_J61Z Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 Fairchild Semiconductor Corporation MMBT5551_R1_00001 vs 2N5551_J61Z
2N5551G Small Signal NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX onsemi MMBT5551_R1_00001 vs 2N5551G
2N5551ZL1G Small Signal NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD onsemi MMBT5551_R1_00001 vs 2N5551ZL1G
MMBT5551LT3G High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi MMBT5551_R1_00001 vs MMBT5551LT3G
MMBT5551/D87Z 200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB Texas Instruments MMBT5551_R1_00001 vs MMBT5551/D87Z
MMBT5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Micro Commercial Components MMBT5551_R1_00001 vs MMBT5551
PMBT5551,235 PMBT5551 - NPN high-voltage transistor@en-us TO-236 3-Pin Nexperia MMBT5551_R1_00001 vs PMBT5551,235
NSVMMBT5551M3T5G High Voltage NPN Bipolar Transistor, 8000-REEL, Automotive Qualified onsemi MMBT5551_R1_00001 vs NSVMMBT5551M3T5G

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