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Part Details for MMBT5551 by onsemi
Overview of MMBT5551 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Industrial Automation
Audio and Video Systems
Electronic Manufacturing
Price & Stock for MMBT5551
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 119 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-236AA | 16 |
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$0.0548 | Buy Now |
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Rochester Electronics | Small Signal Bipolar Transistor, 0.6A, 160V, NPN RoHS: Compliant Status: Obsolete Min Qty: 1 | 414108 |
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$0.0305 / $0.0359 | Buy Now |
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Ameya Holding Limited | 三极管 | 30161 |
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RFQ |
Part Details for MMBT5551
MMBT5551 CAD Models
MMBT5551 Part Data Attributes
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MMBT5551
onsemi
Buy Now
Datasheet
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Compare Parts:
MMBT5551
onsemi
600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SOT-23, 3 PIN | |
| Manufacturer Package Code | 318BM | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz |
Alternate Parts for MMBT5551
This table gives cross-reference parts and alternative options found for MMBT5551. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMBT5551LT3 | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | onsemi | MMBT5551 vs MMBT5551LT3 |
| PMBT5551 | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon | YAGEO Corporation | MMBT5551 vs PMBT5551 |
| MMBT5551LT1G | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | MMBT5551 vs MMBT5551LT1G |
| MMBT5551_R2_00001 | Small Signal Bipolar Transistor, | PanJit Semiconductor | MMBT5551 vs MMBT5551_R2_00001 |
| SMMBT5551LT3G | High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL, Automotive Qualified | onsemi | MMBT5551 vs SMMBT5551LT3G |
| MMBT5551_NL | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | MMBT5551 vs MMBT5551_NL |
| PMBT5551,235 | PMBT5551 - NPN high-voltage transistor@en-us TO-236 3-Pin | Nexperia | MMBT5551 vs PMBT5551,235 |
| MMBT5551D87Z | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SO-3 | Fairchild Semiconductor Corporation | MMBT5551 vs MMBT5551D87Z |
| KST5551MTF | NPN Epitaxial Silicon Transistor, 3000-REEL | onsemi | MMBT5551 vs KST5551MTF |
| CMPT5551BK | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, | Central Semiconductor Corp | MMBT5551 vs CMPT5551BK |