Datasheets
IRFZ30 by:

Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRFZ30 by Fairchild Semiconductor Corporation

Overview of IRFZ30 by Fairchild Semiconductor Corporation

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Part Details for IRFZ30

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IRFZ30 Part Data Attributes:

IRFZ30 Fairchild Semiconductor Corporation
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IRFZ30 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 19 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ30

This table gives cross-reference parts and alternative options found for IRFZ30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP25N06 Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation IRFZ30 vs RFP25N06
BUZ11A Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens IRFZ30 vs BUZ11A
STP30NE06 30A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFZ30 vs STP30NE06
BUZ10 Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors IRFZ30 vs BUZ10
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation IRFZ30 vs HUF75309P3_NL
BUZ11A 30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFZ30 vs BUZ11A
RFP25N06 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRFZ30 vs RFP25N06
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRFZ30 vs HUF75309P3
BUZ10 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFZ30 vs BUZ10
IRFZ30 30A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFZ30 vs IRFZ30
Part Number Description Manufacturer Compare
IRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFZ30 vs IRFR024NTR
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRFZ30 vs RFD14N06L
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRFZ30 vs RFP14N05L
NTD3055L170-1G Single N-Channel Logic Level Power MOSFET 60V, 9A, 170mΩ, DPAK INSERTION MOUNT, 75-TUBE onsemi IRFZ30 vs NTD3055L170-1G
BUK553-60B TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFZ30 vs BUK553-60B
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFZ30 vs BUZ71
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRFZ30 vs IRFZ30
HUF76429D3S Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation IRFZ30 vs HUF76429D3S
RFD14N05 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor IRFZ30 vs RFD14N05
STD20NE06 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 STMicroelectronics IRFZ30 vs STD20NE06

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