Part Details for STP30NE06 by STMicroelectronics
Overview of STP30NE06 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STP30NE06
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 4 | 650 |
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$0.5775 / $1.6500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 77 |
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$0.5985 / $1.9950 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 520 |
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$0.7150 / $2.2000 | Buy Now |
Part Details for STP30NE06
STP30NE06 CAD Models
STP30NE06 Part Data Attributes:
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STP30NE06
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP30NE06
STMicroelectronics
30A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 80 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STP30NE06
This table gives cross-reference parts and alternative options found for STP30NE06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP30NE06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ10 | 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | STP30NE06 vs BUZ10 |
| BUZ11A | 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | STP30NE06 vs BUZ11A |
| IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STP30NE06 vs IRFZ30 |
| RFP25N06 | Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | STP30NE06 vs RFP25N06 |
| RFP25N06 | 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | STP30NE06 vs RFP25N06 |
| BUZ10 | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Siemens | STP30NE06 vs BUZ10 |
| IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STP30NE06 vs IRFZ30 |
| HUF75309P3 | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | STP30NE06 vs HUF75309P3 |
| HUF75309P3 | 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | STP30NE06 vs HUF75309P3 |
| RFP25N06 | 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | STP30NE06 vs RFP25N06 |