Datasheets
BUZ11A by:

30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for BUZ11A by TT Electronics Power and Hybrid / Semelab Limited

Overview of BUZ11A by TT Electronics Power and Hybrid / Semelab Limited

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Part Details for BUZ11A

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BUZ11A Part Data Attributes:

BUZ11A TT Electronics Power and Hybrid / Semelab Limited
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BUZ11A TT Electronics Power and Hybrid / Semelab Limited 30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BUZ11A

This table gives cross-reference parts and alternative options found for BUZ11A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ10 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ11A vs BUZ10
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ11A vs BUZ11A
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUZ11A vs IRFZ30
RFP25N06 Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ11A vs RFP25N06
RFP25N06 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ11A vs RFP25N06
BUZ10 Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens BUZ11A vs BUZ10
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation BUZ11A vs IRFZ30
HUF75309P3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ11A vs HUF75309P3
HUF75309P3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ11A vs HUF75309P3
RFP25N06 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ11A vs RFP25N06
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BUZ11A vs BUZ71L
MTD2N40E-T4 Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products BUZ11A vs MTD2N40E-T4
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ11A vs BUZ11A
MTD20N06VT4 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi BUZ11A vs MTD20N06VT4
STP20NE06L 20A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ11A vs STP20NE06L
934056247118 Power Field-Effect Transistor, 18A I(D), 55V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Nexperia BUZ11A vs 934056247118
PHB21N06LT-T Power Field-Effect Transistor Nexperia BUZ11A vs PHB21N06LT-T
NTD3055L104G Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi BUZ11A vs NTD3055L104G
RFD14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor BUZ11A vs RFD14N06L
PHD21N06LT Power Field-Effect Transistor Nexperia BUZ11A vs PHD21N06LT

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