Part Details for BUZ11A by TT Electronics Power and Hybrid / Semelab Limited
Overview of BUZ11A by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BUZ11A
BUZ11A CAD Models
BUZ11A Part Data Attributes:
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BUZ11A
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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BUZ11A
TT Electronics Power and Hybrid / Semelab Limited
30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SEMELAB LTD | |
Package Description | FLANGE MOUNT, R-MSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-MSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ11A
This table gives cross-reference parts and alternative options found for BUZ11A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ10 | 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | BUZ11A vs BUZ10 |
BUZ11A | 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | BUZ11A vs BUZ11A |
IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | BUZ11A vs IRFZ30 |
RFP25N06 | Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | BUZ11A vs RFP25N06 |
RFP25N06 | 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BUZ11A vs RFP25N06 |
BUZ10 | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Siemens | BUZ11A vs BUZ10 |
IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | BUZ11A vs IRFZ30 |
HUF75309P3 | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | BUZ11A vs HUF75309P3 |
HUF75309P3 | 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BUZ11A vs HUF75309P3 |
RFP25N06 | 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | BUZ11A vs RFP25N06 |