Datasheets
IRFN250SMDR4 by:

27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN

Part Details for IRFN250SMDR4 by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFN250SMDR4 by TT Electronics Power and Hybrid / Semelab Limited

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Part Details for IRFN250SMDR4

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IRFN250SMDR4 Part Data Attributes:

IRFN250SMDR4 TT Electronics Power and Hybrid / Semelab Limited
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IRFN250SMDR4 TT Electronics Power and Hybrid / Semelab Limited 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMELAB LTD
Part Package Code TO-276AB
Package Description CHIP CARRIER, R-CBCC-N3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 27.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-276AB
JESD-30 Code R-CBCC-N3
JESD-609 Code e4
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRFN250SMDR4

This table gives cross-reference parts and alternative options found for IRFN250SMDR4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN250SMDR4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFN250SMDR4 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250SMDR4 vs IRFN250SMDR4
IRFN250SMD 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250SMDR4 vs IRFN250SMD
IRFN250SMD-JQR-B Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250SMDR4 vs IRFN250SMD-JQR-B
IRFN250SMD-JQR-BR4 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250SMDR4 vs IRFN250SMD-JQR-BR4
IRFN250SMD-JQR-BR4 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250SMDR4 vs IRFN250SMD-JQR-BR4
IRFN250SMD-JQR-B 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250SMDR4 vs IRFN250SMD-JQR-B
IRFN250SMD Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250SMDR4 vs IRFN250SMD
Part Number Description Manufacturer Compare
SHD2183B Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5B, 2 PIN Sensitron Semiconductors IRFN250SMDR4 vs SHD2183B
2N7225DPBF 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Infineon Technologies AG IRFN250SMDR4 vs 2N7225DPBF
IRFM250-JQR-BR1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFN250SMDR4 vs IRFM250-JQR-BR1
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation IRFN250SMDR4 vs JANTXV2N7225
2N7219U Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFN250SMDR4 vs 2N7219U
JANTX2N7225 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Intersil Corporation IRFN250SMDR4 vs JANTX2N7225
IRFM250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRFN250SMDR4 vs IRFM250
2N7225U1-JQR-BR4 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250SMDR4 vs 2N7225U1-JQR-BR4
JANTXV2N7219 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation IRFN250SMDR4 vs JANTXV2N7219
STFM250SLX Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation IRFN250SMDR4 vs STFM250SLX

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