Part Details for IRFN250SMDR4 by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFN250SMDR4 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFN250SMDR4
IRFN250SMDR4 CAD Models
IRFN250SMDR4 Part Data Attributes:
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IRFN250SMDR4
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRFN250SMDR4
TT Electronics Power and Hybrid / Semelab Limited
27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMELAB LTD | |
Part Package Code | TO-276AB | |
Package Description | CHIP CARRIER, R-CBCC-N3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 27.4 A | |
Drain-source On Resistance-Max | 0.105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-276AB | |
JESD-30 Code | R-CBCC-N3 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for IRFN250SMDR4
This table gives cross-reference parts and alternative options found for IRFN250SMDR4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN250SMDR4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFN250SMDR4 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN250SMDR4 vs IRFN250SMDR4 |
IRFN250SMD | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN250SMDR4 vs IRFN250SMD |
IRFN250SMD-JQR-B | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN250SMDR4 vs IRFN250SMD-JQR-B |
IRFN250SMD-JQR-BR4 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN250SMDR4 vs IRFN250SMD-JQR-BR4 |
IRFN250SMD-JQR-BR4 | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN250SMDR4 vs IRFN250SMD-JQR-BR4 |
IRFN250SMD-JQR-B | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN250SMDR4 vs IRFN250SMD-JQR-B |
IRFN250SMD | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRFN250SMDR4 vs IRFN250SMD |