Datasheets
IRFN250SMD by:

27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN

Part Details for IRFN250SMD by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFN250SMD by TT Electronics Power and Hybrid / Semelab Limited

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Part Details for IRFN250SMD

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IRFN250SMD Part Data Attributes

IRFN250SMD TT Electronics Power and Hybrid / Semelab Limited
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IRFN250SMD TT Electronics Power and Hybrid / Semelab Limited 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SEMELAB LTD
Part Package Code TO-276AB
Package Description CHIP CARRIER, R-CBCC-N3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 27.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-276AB
JESD-30 Code R-CBCC-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IRFN250SMD

This table gives cross-reference parts and alternative options found for IRFN250SMD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN250SMD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFN250SMDR4 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250SMD vs IRFN250SMDR4
IRFN250SMD-JQR-BR4 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250SMD vs IRFN250SMD-JQR-BR4
IRFN250SMD-JQR-BR4 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250SMD vs IRFN250SMD-JQR-BR4
IRFN250SMD-JQR-B Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250SMD vs IRFN250SMD-JQR-B
Part Number Description Manufacturer Compare
IRFN250R4 22A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFN250SMD vs IRFN250R4
2N7225U Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFN250SMD vs 2N7225U
STFM250 Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Silicon Transistor Corporation IRFN250SMD vs STFM250
IRFM250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFN250SMD vs IRFM250
IRFM250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Resistors IRFN250SMD vs IRFM250
IRFN250SMD-JQR-B Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFN250SMD vs IRFN250SMD-JQR-B
JANTXV2N7225U Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN International Rectifier IRFN250SMD vs JANTXV2N7225U
IRFM250 Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Temic Semiconductors IRFN250SMD vs IRFM250
IRFM250-JQR-BR1 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFN250SMD vs IRFM250-JQR-BR1
IRFM240-QR-BR1 Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors IRFN250SMD vs IRFM240-QR-BR1

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