IRFN250SMDR4
vs
IRFM250
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SEMELAB LTD
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
TO-276AB
|
|
| Package Description |
CHIP CARRIER, R-CBCC-N3
|
FLANGE MOUNT, R-MSFM-P3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
500 mJ
|
500 mJ
|
| Case Connection |
DRAIN
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
27.4 A
|
27.4 A
|
| Drain-source On Resistance-Max |
0.105 Ω
|
0.105 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-276AB
|
TO-254AA
|
| JESD-30 Code |
R-CBCC-N3
|
R-MSFM-P3
|
| JESD-609 Code |
e4
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
METAL
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
110 A
|
110 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
GOLD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
NO LEAD
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
3
|
| Samacsys Manufacturer |
|
Infineon
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
150 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFN250SMDR4 with alternatives
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