Part Details for BSM25GD120DN2 by Infineon Technologies AG
Overview of BSM25GD120DN2 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM25GD120DN2
BSM25GD120DN2 CAD Models
BSM25GD120DN2 Part Data Attributes
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BSM25GD120DN2
Infineon Technologies AG
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Datasheet
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BSM25GD120DN2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | ECONOPACK-17 | |
Pin Count | 17 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 35 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X17 | |
Number of Elements | 6 | |
Number of Terminals | 17 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 450 ns | |
Turn-on Time-Nom (ton) | 140 ns | |
VCEsat-Max | 3.2 V |
Alternate Parts for BSM25GD120DN2
This table gives cross-reference parts and alternative options found for BSM25GD120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM25GD120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSM25GD120D2 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | BSM25GD120DN2 vs BSM25GD120D2 |
MG25Q6ES50A | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, 2-108E2A, 17 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM25GD120DN2 vs MG25Q6ES50A |
MG25Q6ES1 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM25GD120DN2 vs MG25Q6ES1 |
CM30TF-24H | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | BSM25GD120DN2 vs CM30TF-24H |
6MBI25F-120 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN | Fuji Electric Co Ltd | BSM25GD120DN2 vs 6MBI25F-120 |
BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | Infineon Technologies AG | BSM25GD120DN2 vs BSM25GD120DN2E3224 |
BSM25GD120DN2E3224 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM25GD120DN2 vs BSM25GD120DN2E3224 |
BSM25GD120DN2 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM25GD120DN2 vs BSM25GD120DN2 |