Part Details for BSM25GD120D2 by Eupec Gmbh & Co Kg
Overview of BSM25GD120D2 by Eupec Gmbh & Co Kg
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM25GD120D2
BSM25GD120D2 CAD Models
BSM25GD120D2 Part Data Attributes
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BSM25GD120D2
Eupec Gmbh & Co Kg
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Datasheet
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BSM25GD120D2
Eupec Gmbh & Co Kg
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel,
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | EUPEC GMBH & CO KG | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 25 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X17 | |
Number of Elements | 6 | |
Number of Terminals | 17 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3.2 V |
Alternate Parts for BSM25GD120D2
This table gives cross-reference parts and alternative options found for BSM25GD120D2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM25GD120D2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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BSM25GD120D2 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | BSM25GD120D2 vs BSM25GD120D2 |
6MBI25F-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN | BSM25GD120D2 vs 6MBI25F-120 |
BSM25GD120DN2E3224 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | BSM25GD120D2 vs BSM25GD120DN2E3224 |
6MBI25LB-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN | BSM25GD120D2 vs 6MBI25LB-120 |
6MBI25L-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN | BSM25GD120D2 vs 6MBI25L-120 |