Part Details for 2SK3778-01 by Fuji Electric Co Ltd
Overview of 2SK3778-01 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SK3778-01
2SK3778-01 CAD Models
2SK3778-01 Part Data Attributes:
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2SK3778-01
Fuji Electric Co Ltd
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Datasheet
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2SK3778-01
Fuji Electric Co Ltd
Power Field-Effect Transistor, 59A I(D), 250V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1115.2 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 59 A | |
| Drain-source On Resistance-Max | 0.053 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 236 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3778-01
This table gives cross-reference parts and alternative options found for 2SK3778-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3778-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTT64N25P | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | 2SK3778-01 vs IXTT64N25P |
| IPB64N25S3-20 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | 2SK3778-01 vs IPB64N25S3-20 |
| IXTT64N25P | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | 2SK3778-01 vs IXTT64N25P |
| IXTK62N25 | Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | 2SK3778-01 vs IXTK62N25 |
| IPB64N25S320ATMA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 | Infineon Technologies AG | 2SK3778-01 vs IPB64N25S320ATMA1 |
| FDA59N25 | Power MOSFET, N-Channel, UniFETTM, 250V, 59A, 49mΩ, TO-3P, 450-TUBE | onsemi | 2SK3778-01 vs FDA59N25 |
| IPI200N25N3GAKSA1 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | 2SK3778-01 vs IPI200N25N3GAKSA1 |
| SP000677896 | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN | Infineon Technologies AG | 2SK3778-01 vs SP000677896 |
| IXTQ64N25P | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | 2SK3778-01 vs IXTQ64N25P |
| IPP220N25NFD | Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | 2SK3778-01 vs IPP220N25NFD |