Findchips: Compare PHM30NQ10T,518 vs PH1955L,115

PHM30NQ10T,518 vs PH1955L,115 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Obsolete	Transferred
Ihs Manufacturer	NXP SEMICONDUCTORS	NXP SEMICONDUCTORS
Part Package Code	SOT	SOIC
Package Description	SMALL OUTLINE, R-PDSO-N8	PLASTIC, LFPAK-4
Pin Count	8	4
Manufacturer Package Code	SOT685-1	SOT669
Reach Compliance Code	unknown	unknown
ECCN Code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	55 V
Drain Current-Max (ID)	37.6 A	40 A
Drain-source On Resistance-Max	0.02 Ω	0.021 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-N8	R-PSSO-G4
Number of Elements	1	1
Number of Terminals	8	4
Operating Mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	175 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Polarity/Channel Type	N-CHANNEL	N-CHANNEL
Pulsed Drain Current-Max (IDM)	60 A	160 A
Qualification Status	Not Qualified	Not Qualified
Surface Mount	YES	YES
Terminal Form	NO LEAD	GULL WING
Terminal Position	DUAL	SINGLE
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Base Number Matches	1	2
Rohs Code		Yes
Avalanche Energy Rating (Eas)		80 mJ
Case Connection		DRAIN
JEDEC-95 Code		MO-235
JESD-609 Code		e3
Moisture Sensitivity Level		1
Power Dissipation-Max (Abs)		75 W
Terminal Finish		TIN
	Transistors » Power Field-Effect Transistors	Transistors » Power Field-Effect Transistors