PHM30NQ10T,518
vs
PHM25NQ10T,518
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Part Package Code |
SOT
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-N8
|
SMALL OUTLINE, R-PDSO-N8
|
| Pin Count |
8
|
8
|
| Manufacturer Package Code |
SOT685-1
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
37.6 A
|
30.7 A
|
| Drain-source On Resistance-Max |
0.02 Ω
|
0.03 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-N8
|
R-PDSO-N8
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
60 A
|
60 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Avalanche Energy Rating (Eas) |
|
170 mJ
|
| Case Connection |
|
DRAIN
|
|
|
|
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Compare PHM25NQ10T,518 with alternatives
-
PHM25NQ10T,518 vs PH20100S
-
PHM25NQ10T,518 vs PSMN3R3-40YS
-
PHM25NQ10T,518 vs PH1955L,115
-
PHM25NQ10T,518 vs PH1955L
-
PHM25NQ10T,518 vs PSMN8R5-60YS
-
PHM25NQ10T,518 vs PSMN020-100YS
-
PHM25NQ10T,518 vs PH20100S,115
-
PHM25NQ10T,518 vs PHM25NQ10T