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PH1955L,115 by:

PH1955L - N-channel TrenchMOS logic level FET SOIC 4-Pin

Part Details for PH1955L,115 by NXP Semiconductors

Overview of PH1955L,115 by NXP Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for PH1955L,115

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PH1955L,115 Part Data Attributes

PH1955L,115 NXP Semiconductors
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PH1955L,115 NXP Semiconductors PH1955L - N-channel TrenchMOS logic level FET SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOIC
Package Description PLASTIC, LFPAK-4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PH1955L,115

This table gives cross-reference parts and alternative options found for PH1955L,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PH1955L,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PH1955L TRANSISTOR 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PH1955L,115 vs PH1955L
Part Number Description Manufacturer Compare
PHM30NQ10T,518 PHM30NQ10T NXP Semiconductors PH1955L,115 vs PHM30NQ10T,518
PSMN039-100YS TRANSISTOR 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PH1955L,115 vs PSMN039-100YS
PSMN020-100YS TRANSISTOR 43 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PH1955L,115 vs PSMN020-100YS
PH1955L TRANSISTOR 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PH1955L,115 vs PH1955L
PH1955L,115 PH1955L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin Nexperia PH1955L,115 vs PH1955L,115
PSMN8R5-60YS TRANSISTOR 76 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PH1955L,115 vs PSMN8R5-60YS
PSMN8R5-60YS Power Field-Effect Transistor Nexperia PH1955L,115 vs PSMN8R5-60YS
PH20100S,115 PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin NXP Semiconductors PH1955L,115 vs PH20100S,115
PSMN020-100YS Power Field-Effect Transistor, 43A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 Nexperia PH1955L,115 vs PSMN020-100YS
PSMN3R3-40YS Power Field-Effect Transistor Nexperia PH1955L,115 vs PSMN3R3-40YS

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