Findchips: Compare PH1955L,115 vs PSMN020-100YS

PH1955L,115 vs PSMN020-100YS feature comparison

Buy Now Datasheet

Buy Now Datasheet

Rohs Code	Yes	Yes
Part Life Cycle Code	Transferred	Transferred
Ihs Manufacturer	NXP SEMICONDUCTORS	NXP SEMICONDUCTORS
Part Package Code	SOIC
Package Description	PLASTIC, LFPAK-4	PLASTIC, LFPAK-4
Pin Count	4	235
Manufacturer Package Code	SOT669
Reach Compliance Code	unknown	not_compliant
ECCN Code	EAR99	EAR99
Avalanche Energy Rating (Eas)	80 mJ	71 mJ
Case Connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	55 V	100 V
Drain Current-Max (ID)	40 A	43 A
Drain-source On Resistance-Max	0.021 Ω	0.0205 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-235	MO-235
JESD-30 Code	R-PSSO-G4	R-PSSO-G4
JESD-609 Code	e3	e3
Moisture Sensitivity Level	1	1
Number of Elements	1	1
Number of Terminals	4	4
Operating Mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	175 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Polarity/Channel Type	N-CHANNEL	N-CHANNEL
Power Dissipation-Max (Abs)	75 W	106 W
Pulsed Drain Current-Max (IDM)	160 A	172 A
Qualification Status	Not Qualified	Not Qualified
Surface Mount	YES	YES
Terminal Finish	TIN	Tin (Sn)
Terminal Form	GULL WING	GULL WING
Terminal Position	SINGLE	SINGLE
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Base Number Matches	2	2
Peak Reflow Temperature (Cel)		260
Time@Peak Reflow Temperature-Max (s)		30
	Transistors » Power Field-Effect Transistors	Transistors » Power Field-Effect Transistors