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BAR9002ELSE6327XTSA1
Infineon Technologies AG
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$0.0508 | Yes | End Of Life | 0.35 pF | 0.35 pF | 150 mW | 2.3 Ω | SILICON | 80 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | SWITCHING | 3 mA | 100 MHz | C BAND | 750 ns | R-PBCC-N2 | e4 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | Gold (Au) | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||||
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BAR6403WE6327HTSA1
Infineon Technologies AG
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$0.0584 | Yes | Active | 0.35 pF | 2.8 Ω | SILICON | 150 V | PIN DIODE | SINGLE | 1 | POSITIVE-INTRINSIC-NEGATIVE | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||||||
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BAR6702VH6327XTSA1
Infineon Technologies AG
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$0.0585 | Yes | Active | 0.9 pF | 250 mW | 1.8 Ω | SILICON | 150 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | L BAND | 700 ns | R-PDSO-F2 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.10.00.80 | Infineon | R-PDSO-F2 | |||||||||||||||||
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BAR6402VH6327XTSA1
Infineon Technologies AG
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$0.0594 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SINGLE | 1 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||||||||||||||||||||||
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BA679-GS08
Vishay Intertechnologies
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$0.0698 | Yes | Obsolete | 0.5 pF | 50 Ω | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR | 1.5 mA | 100 MHz | ULTRA HIGH FREQUENCY | 4 µs | Not Qualified | O-LELF-R2 | e2 | DO-213AA | 1 | 125 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN SILVER | WRAP AROUND | END | VISHAY INTERTECHNOLOGY INC | compliant | Vishay | ROHS COMPLIANT, GLASS, MINIMELF-2 | |||||||||||||||
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BAR6303WE6327HTSA1
Infineon Technologies AG
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$0.0721 | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G2 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.10.00.80 | Infineon | R-PDSO-G2 | |||||||||||||||||
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BAR6302VH6327XTSA1
Infineon Technologies AG
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$0.0760 | Yes | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-F2 | e3 | AEC-Q101 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.10.00.80 | Infineon | R-PDSO-F2 | SC-79 | 2 | ||||||||||||
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BA885E6327
Infineon Technologies AG
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$0.0765 | Yes | Yes | Active | 0.4 pF | 0.26 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 1.5 mA | 100 MHz | MEDIUM FREQUENCY TO L BAND | 1.6 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | 260 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.10.00.80 | Infineon | SOT-23, 3 PIN | SOT-23 | 3 | ||||||||||||
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RN141CMT2R
ROHM Semiconductor
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$0.0806 | Yes | Active | 0.8 pF | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH RELIABILITY | SWITCHING | 3 mA | 100 MHz | VERY HIGH FREQUENCY | 1 V | R-PDSO-F2 | e3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | ROHM CO LTD | compliant | EAR99 | 8541.10.00.80 | ROHM Semiconductor | 2018-08-09 | ||||||||||||||||
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BAP65-03,115
NXP Semiconductors
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$0.0848 | Yes | Not Recommended | 0.9 pF | 0.65 pF | 500 mW | 900 mΩ | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 5 mA | 100 MHz | 170 ns | Not Qualified | R-PDSO-G2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | compliant | EAR99 | 8541.10.00 | NXP | PLASTIC, SC-76, 2 PIN | SOD | 2 | SOD323 |