Parametric results for: 6N60%20DATA under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 60 AVALANCHE RATED, ULTRA-LOW RESISTANCE 1 CUSTOM BENT LEAD OPTIONS ARE AVAILABLE 96 FAST SWITCHING 14 FAST SWITCHING, AVALANCHE RATED 2 HIGH RELIABILITY 48 HIGH VOLTAGE 4 HIGH VOLTAGE, FAST SWITCHING 1 LEADFORM OPTIONS ARE AVAILABLE 2 LOW CONDUCTION LOSS 10 LOW NOISE 14 ULTRA LOW RESISTANCE 1

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24.0 mJ 3 36.0 mJ 12 68.0 mJ 13 86.0 mJ 3 90.0 mJ 6 113.0 mJ 4 140.0 mJ 4 150.0 mJ 3 180.0 mJ 2 200.0 mJ 11 202.0 mJ 8 218.0 mJ 4 231.0 mJ 2 242.7 mJ 2 250.0 mJ 3 260.0 mJ 20 290.0 mJ 4 300.0 mJ 13 310.0 mJ 12 313.7 mJ 7 330.0 mJ 20 340.0 mJ 4 341.0 mJ 3 343.0 mJ 2 350.0 mJ 1 353.0 mJ 2 355.0 mJ 7 370.0 mJ 1 405.0 mJ 6 420.0 mJ 2 421.0 mJ 1 440.0 mJ 30 450.0 mJ 12 460.0 mJ 1 554.8 mJ 11 570.0 mJ 13 596.0 mJ 1 750.0 mJ 4 800.0 mJ 6 1200.0 mJ 14 1500.0 mJ 17 1800.0 mJ 8 2200.0 mJ 3 2500.0 mJ 4 7381.0 mJ 2 8022.0 mJ 4

Min (mJ) - Max (mJ)

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DRAIN 162 ISOLATED 229

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Collector Current-Max (IC) (1)

32 A 10

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Collector-Emitter Voltage-Max (1)

600 V 10

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Configuration (3)

SINGLE 91 Single 7 SINGLE WITH BUILT-IN DIODE 485

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DS Breakdown Voltage-Min (4)

60 V 1 150 V 12 600 V 515 800 V 1

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

6 A 7

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Drain Current-Max (ID) (38)

2.8 A 3 3.2 A 1 3.5 A 1 3.6 A 2 3.8 A 1 4 A 7 4.5 A 10 5 A 1 5.4 A 6 5.5 A 14 6 A 282 6.2 A 93 6.8 A 3 7 A 6 7.1 A 4 8.4 A 1 11.3 A 4 12 A 4 15.8 A 2 16 A 38 16.5 A 1 18 A 1 19 A 1 20 A 5 23 A 1 24 A 1 25 A 1 26 A 28 30 A 1 34.9 A 2 36 A 25 52 A 2 60 A 1 72.8 A 2 76 A 4 81 A 1 95 A 1 106 A 3

Min (A) - Max (A)

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Drain-source On Resistance-Max (38)

7.5 mΩ 1 26 mΩ 1 35 mΩ 3 36 mΩ 4 38 mΩ 2 90 mΩ 10 95 mΩ 2 99 mΩ 1 135 mΩ 1 141 mΩ 1 165 mΩ 5 170 mΩ 2 180 mΩ 4 190 mΩ 7 193 mΩ 3 199 mΩ 7 200 mΩ 2 201 mΩ 1 230 mΩ 3 250 mΩ 15 260 mΩ 9 270 mΩ 16 380 mΩ 4 400 mΩ 1 440 mΩ 3 460 mΩ 2 470 mΩ 14 570 mΩ 2 750 mΩ 15 950 mΩ 4 1.2 Ω 236 1.4 Ω 40 1.44 Ω 12 1.5 Ω 55 1.65 Ω 4 1.7 Ω 2 1.8 Ω 17 2 Ω 16

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 573

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0.7 pF 3 3.6 pF 3 3.9 pF 8 4 pF 12 5 pF 4 6 pF 1 8 pF 10 8.6 pF 3 10 pF 2 11 pF 20 13 pF 8 17 pF 20 18 pF 4 60 pF 2 63 pF 12 110 pF 2 114 pF 6 120 pF 1 150 pF 10 229 pF 2

Min (pF) - Max (pF)

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Gate-Emitter Thr Voltage-Max (1)

6.5 V 10

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20 V 10

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TO-204AA 2 TO-218AC 2 TO-220AB 174 TO-247 14 TO-247AA 2 TO-247AB 2 TO-247AC 5 TO-247AD 10 TO-251 33 TO-252 19 TO-252AA 5 TO-254AA 69 TO-262AA 2 TO-263AB 14 TO-264 2 TO-264AA 5 TO-268AA 8

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O-MBFM-P2 2 R-CSIP-T4 1 R-PDSO-F4 1 R-PSFM-T3 243 R-PSIP-T3 56 R-PSSO-G2 75 R-PUFM-X4 3 R-XUUC-N 1 R-XUUC-N1 1 R-XUUC-N2 3 R-XUUC-N3 1 S-MSFM-P3 96 S-MSFM-T3 48 S-PSSO-N4 3

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e0 53 e1 11 e3 99 e4 1

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Manufacturer (42)

Champion Microelectronic Corp 2 Continental Device India Ltd 1 Fairchild Semiconductor Corporation 34 Freescale Semiconductor 7 Fuji Electric Co Ltd 21 Galaxy Microelectronics 1 Galaxy Semi-Conductor Co Ltd 1 HY Electronic Corp 2 Infineon Technologies AG 19 International Rectifier 6 IXYS Corporation 37 Jiangsu Changjiang Electronics Technology Co Ltd 1 KEC 4 Littelfuse Inc 27 LRC Leshan Radio Co Ltd 4 MagnaChip Semiconductor Ltd 2 MERITEK Electronics Corporation 1 Microchip Technology Inc 2 Microsemi Corporation 1 Micross Components 3 Motorola Mobility LLC 25 Motorola Semiconductor Products 25 New Jersey Semiconductor Products Inc 2 NXP Semiconductors 9 onsemi 27 Philips Semiconductors 6 Rectron Semiconductor 4 Rochester Electronics LLC 16 Samsung Semiconductor 6 Secos Corporation 4 Semiconductor Technology Inc 2 Siemens 4 Solid State Devices Inc (SSDI) 1 Solitron Devices Inc 144 STMicroelectronics 45 Suzhou Good-Ark Electronics Co Ltd 1 Taiwan Semiconductor 2 Toshiba America Electronic Components 3 TXC Corporation 1 Unisonic Technologies Co Ltd 164 Vishay Intertechnologies 13 Vishay Siliconix 3

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1 29 NOT APPLICABLE 7 NOT SPECIFIED 6

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Number of Elements (1)

1 578

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Number of Terminals (4)

1 1 2 80 3 444 4 8

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ENHANCEMENT MODE 565

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150.0 °C 479

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-65.0 °C 2 -55.0 °C 93

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 1 METAL 146 PLASTIC/EPOXY 381 UNSPECIFIED 6

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RECTANGULAR 385 ROUND 2 SQUARE 147

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FLANGE MOUNT 392 IN-LINE 57 SMALL OUTLINE 79 UNCASED CHIP 6

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Active 411 Contact Manufacturer 16 End Of Life 13 Not Recommended 25 Obsolete 154 Transferred 64

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No 151 Yes 88

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235 3 245 3 260 32 NOT APPLICABLE 6 NOT SPECIFIED 312

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Polarity/Channel Type (1)

N-CHANNEL 583

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35 W 1 40 W 1 40.3 W 1 100 W 144 125 W 40 150 W 7 500 W 2 520 W 2

Min (W) - Max (W)

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3.13 W 5 20 W 1 25 W 1 32 W 3 33 W 1 33.8 W 2 35 W 3 35.7 W 2 37 W 2 37.9 W 1 40 W 38 42 W 10 44 W 1 51 W 2 55 W 50 59 W 1 60 W 4 62.5 W 4 74 W 2 80 W 3 89 W 2 90 W 2 95 W 2 100 W 51 105 W 3 110 W 3 114 W 1 125 W 46 130 W 3 134.4 W 5 135 W 8 142 W 3 147 W 4 150 W 9 156 W 3 167 W 3 170 W 4 180 W 2 270 W 5 310 W 2 312 W 6 347 W 6 350 W 2 360 W 4 446 W 3 470 W 4 500 W 2 520 W 2 543 W 6 833 W 2

Min (W) - Max (W)

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Surface Mount (2)

NO 483 YES 96

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