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AP3983BMTR-G1
Diodes Incorporated
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$0.2920 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 1 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | 2021-09-03 21:18:07 | 12 | RoHS 2 (2015/863/EU) | 2024-06-27 | e | DRC Conflict Free | CMRT V6.20 | [object Object],[object Object],[object Object] | [object Object],[object Object],[object ... more | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AP3983DP7-G1
Diodes Incorporated
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$0.2961 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | 2021-08-03 10:04:17 | 12 | RoHS 2 (2015/863/EU) | 2024-06-27 | e | DRC Conflict Free | CMRT V6.20 | [object Object],[object Object],[object Object] | [object Object],[object Object],[object ... more | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AP3983CMTR-G1
Diodes Incorporated
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$0.3144 | Yes | Obsolete | STANDARD SRAM | e3 | 260 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | 2019-03-21 19:00:43 | 12 | RoHS 2 (2015/863/EU) | 2024-06-27 | e | DRC Conflict Free | CMRT V6.20 | [object Object],[object Object],[object Object] | [object Object],[object Object],[object Object],[object Object],[object Object] | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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23K256-I/P
Microchip Technology Inc
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$0.5770 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | 2023-03-07 16:10:32 | 12 | RoHS 2 (2015/863/EU) | 2024-01-23 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object],[object Object],[object ... more | DIP | DIP-8 | 8 | 12 | 569.675 | 6836.1 | Microchip 23K256-I/P SRAM Memory, 256kbit, 2.7 → 3.6 V, 25ns 8-Pin PDIP | 486.7 | 5840.4 | Industrial: -40C to +85C | 80 | YES | 1333-86-4 | [object Object] | |||||||||
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23LC512-I/SN
Microchip Technology Inc
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$0.6270 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | 2023-03-07 16:10:32 | 12 | RoHS 2 (2015/863/EU) | 2024-01-23 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object],[object Object],[object ... more | MICROCHIP - 23LC512-I/SN - SRAM, 512 Kbi... more | 78 | 936 | Industrial: -40C to +85C | 91 | YES | 1333-86-4 | [object Object] | ||||||||||||
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N25S830HAS22I
onsemi
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$0.6522 | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | ONSEMI | compliant | EAR99 | 8542.32.00.41 | onsemi | 2024-09-19 14:45:22 | 12 | RoHS 2 (2015/863/EU) | 2024-01-23 | e | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object] | [object Object],[object Object],[object ... more | SOIC-8 Narrow Body | 0.150 INCH, GREEN, PLASTIC, SOIC-8 | 8 | 12 | 66.775 | 801.3 | 81.78 | 981.36 | Industrial: -40C to +85C | 94 | YES | 1333-86-4 | 1037592 | 751AZ | ||||||||
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23K256T-I/SN
Microchip Technology Inc
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$0.6527 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | 2023-03-07 16:10:32 | 12 | RoHS 2 (2015/863/EU) | 2024-01-23 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object],[object Object],[object ... more | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | MICROCHIP - 23K256T-I/SN - 256K, 32K X 8... more | 78 | 936 | Industrial: -40C to +85C | 90 | YES | 1333-86-4 | [object Object] | |||||||||
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23K640-I/SN
Microchip Technology Inc
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$0.6555 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | 2023-06-22 02:40:13 | 12 | RoHS 2 (2015/863/EU) | 2024-01-23 | e | DRC Conflict Free | CMRT V6.22 | [object Object],[object Object] | [object Object],[object Object],[object ... more | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | 8 | 64K,8K X 8 2.7V Ser SRAM,23K640-I/SN | 78 | 936 | Industrial: -40C to +85C | 90 | YES | 1333-86-4 | [object Object] | ||||||||
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IS62WV6416FBLL-45TLI-TR
Integrated Silicon Solution Inc
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$0.6631 | Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. | 2022-07-24 21:13:38 | 12 | RoHS 2 (2015/863/EU) | 2023-06-14 | e | DRC Conflict Free | CMRT V6.01 | [object Object],[object Object],[object Object],[object Object] | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61WV12816EFBLL-10TLI-TR
Integrated Silicon Solution Inc
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$0.6794 | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 2.4 V | 35 µA | 3.6 V | 2.4 V | CMOS | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | 12 | RoHS 2 (2015/863/EU) | 2023-06-14 | e | DRC Conflict Free | CMRT V6.01 | [object Object],[object Object],[object Object],[object Object] | Industrial: -40C to +85C |