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R1LV0216BSB-5SI#B1
Renesas Electronics Corporation
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$0.1977 | Yes | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 µA | 2 V | 25 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G44 | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | RENESAS ELECTRONICS CORP | TSOP(44) | 44 | PTSB0044GH | compliant | 3A991.B.2.A | 8542.32.00.41 | Renesas Electronics | ||||||||||
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AP3983BMTR-G1
Diodes Incorporated
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$0.2912 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 1 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||
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AP3983DP7-G1
Diodes Incorporated
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$0.2958 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||||
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AP3983CMTR-G1
Diodes Incorporated
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$0.3143 | Yes | Obsolete | STANDARD SRAM | e3 | 260 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||||||
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23K256-I/P
Microchip Technology Inc
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$0.5770 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | DIP-8 | ||||||||
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23LC512-I/SN
Microchip Technology Inc
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$0.6270 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||||
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N25S830HAS22I
onsemi
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$0.6523 | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | ONSEMI | SOIC-8 Narrow Body | 8 | 751AZ | compliant | EAR99 | 8542.32.00.41 | onsemi | 0.150 INCH, GREEN, PLASTIC, SOIC-8 | ||||||
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IS62WV6416FBLL-45TLI-TR
Integrated Silicon Solution Inc
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$0.6631 | Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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23K640-I/SN
Microchip Technology Inc
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$0.6705 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | ||||
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IS61WV12816EFBLL-10TLI-TR
Integrated Silicon Solution Inc
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$0.6794 | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 2.4 V | 35 µA | 3.6 V | 2.4 V | CMOS | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 |