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R1LV0216BSB-5SI#B1
Renesas Electronics Corporation
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$0.2033 | Yes | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 55 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 µA | 2 V | 25 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G44 | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | RENESAS ELECTRONICS CORP | TSOP(44) | 44 | PTSB0044GH | compliant | 3A991.B.2.A | 8542.32.00.41 | Renesas Electronics | |||||||||
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AP3983DP7-G1
Diodes Incorporated
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$0.3041 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||
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AP3983CMTR-G1
Diodes Incorporated
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$0.3235 | Yes | Obsolete | STANDARD SRAM | e3 | 260 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||||
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AP3983BMTR-G1
Diodes Incorporated
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$0.4488 | Yes | Yes | Obsolete | STANDARD SRAM | e3 | 1 | 260 | 30 | MATTE TIN | DIODES INC | compliant | EAR99 | 8542.32.00.41 | Diodes Incorporated | |||||||||||||||||||||||||||||||||||||||||||||
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23K256-I/P
Microchip Technology Inc
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$0.5375 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | DIP-8 | |||||||
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N25S830HAS22I
onsemi
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$0.5849 | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | ONSEMI | SOIC-8 Narrow Body | 8 | 751AZ | compliant | EAR99 | 8542.32.00.41 | onsemi | 0.150 INCH, GREEN, PLASTIC, SOIC-8 | |||||
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IS62WV6416FBLL-45TLI-TR
Integrated Silicon Solution Inc
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$0.6631 | Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. | |||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61WV12816EFBLL-10TLI-TR
Integrated Silicon Solution Inc
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$0.6794 | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 2.4 V | 35 µA | 3.6 V | 2.4 V | CMOS | R-PDSO-G44 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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IS61WV25616EFBLL-10BLI-TR
Integrated Silicon Solution Inc
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$0.6823 | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 15 mA | 2 V | 35 µA | 3.6 V | 2.4 V | CMOS | R-PBGA-B48 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | INTEGRATED SILICON SOLUTION INC | unknown | 3A991.B.2.A | 8542.32.00.41 | MINIBGA-48 | ||||||||||||||||
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IS61WV5128FBLL-10TLI-TR
Integrated Silicon Solution Inc
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$0.6823 | Yes | Active | STANDARD SRAM | NOT SPECIFIED | NOT SPECIFIED | INTEGRATED SILICON SOLUTION INC | compliant | Integrated Silicon Solution Inc. |