Parametric results for: DRAMs

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IS46LQ16256A-062BLA1
Integrated Silicon Solution Inc
$1.0000 Yes Active 4.295 Gbit 16 256MX16 1.6 GHz MULTI BANK PAGE BURST LPDDR4 DRAM TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY COMMON 1 1 256000000 268.4355 M SYNCHRONOUS NO 1.17 V 1.06 V CMOS INDUSTRIAL R-PBGA-B200 95 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC FBGA-200 compliant EAR99 8542.32.00.36
IS49NLC18320A-25WBL
Integrated Silicon Solution Inc
$1.0000 Yes Active 603.9798 Mbit 18 32MX18 1.8 V MULTI BANK PAGE BURST DDR DRAM AUTO REFRESH 1 1 32000000 33.5544 M SYNCHRONOUS 1.9 V 1.7 V CMOS R-PBGA-B144 e1 260 10 144 PLASTIC/EPOXY TBGA RECTANGULAR GRID ARRAY, THIN PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.2 mm 18.5 mm 11 mm INTEGRATED SILICON SOLUTION INC TBGA, compliant EAR99 8542.32.00.32
IS43LQ16128A-062BLI
Integrated Silicon Solution Inc
$1.0000 Yes Active 2.1475 Gbit 16 128MX16 1.6 GHz MULTI BANK PAGE BURST LPDDR4 DRAM terminal pitch-max COMMON 16,32 1 1 128000000 134.2177 M SYNCHRONOUS NO 16,32 1.95 V 1.7 V CMOS INDUSTRIAL R-PBGA-B200 95 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC VFBGA, compliant EAR99 8542.32.00.36 Integrated Silicon Solution Inc.
MT4KTF25664HZ-1G9P1
Micron Technology Inc
$1.0000 Yes Active 17.1799 Gbit 64 256MX64 1.35 V SINGLE BANK PAGE BURST DDR3L DRAM MODULE AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS COMMERCIAL R-XZMA-N204 70 °C 260 30 204 UNSPECIFIED DIMM RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 600 µm ZIG-ZAG 30.15 mm 67.6 mm 3.8 mm MICRON TECHNOLOGY INC DIMM, compliant EAR99 8542.32.00.36 Micron
IS45S16100H-7BLA2-TR
Integrated Silicon Solution Inc
$1.0060 Yes Active 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 1000000 1.0486 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PBGA-B60 105 °C -40 °C NOT SPECIFIED NOT SPECIFIED 60 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1.2 mm 10.1 mm 6.4 mm INTEGRATED SILICON SOLUTION INC TFBGA, compliant EAR99 8542.32.00.02 Integrated Silicon Solution Inc.
IS43LR16400C-6BLI-TR
Integrated Silicon Solution Inc
$1.0403 Yes Yes Active 67.1089 Mbit 16 4MX16 1.8 V 5.5 ns FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 1.95 V 1.7 V CMOS INDUSTRIAL R-PBGA-B60 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 60 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.1 mm 10 mm 8 mm INTEGRATED SILICON SOLUTION INC TFBGA, compliant EAR99 8542.32.00.02
IS42S16100H-7BLI
Integrated Silicon Solution Inc
$1.0827 Yes Active 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns 143 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 3.5 mA 70 µA 3.6 V 3 V CMOS INDUSTRIAL R-PBGA-B60 Not Qualified 85 °C -40 °C 60 PLASTIC/EPOXY TFBGA BGA60,7X15,25 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 650 µm BOTTOM 1.2 mm 10.1 mm 6.4 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA60,7X15,25 compliant EAR99 8542.32.00.02 Integrated Silicon Solution Inc.
W9816G6JH-6
Winbond Electronics Corp
$1.1000 Yes Not Recommended 16.7772 Mbit 16 1MX16 3.3 V 5 ns DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 1000000 1.0486 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G50 70 °C NOT SPECIFIED NOT SPECIFIED 50 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm WINBOND ELECTRONICS CORP TSOP2, compliant EAR99 8542.32.00.02 Winbond
W9816G6IH-6I
Winbond Electronics Corp
$1.1293 Yes Obsolete 16.7772 Mbit 16 1MX16 3.3 V 5 ns 166 MHz 4096 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 110 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm WINBOND ELECTRONICS CORP TSOP2, TSOP50,.46,32 compliant EAR99 8542.32.00.02 TSOP2 50
W9816G6JH-6I
Winbond Electronics Corp
$1.1487 Yes Not Recommended 16.7772 Mbit 16 1MX16 3.3 V 5 ns DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 1000000 1.0486 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 50 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm WINBOND ELECTRONICS CORP TSOP2-50 compliant EAR99 8542.32.00.02 Winbond