Parametric results for: DRAMs

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P2416
Intel Corporation
Check for Price No Obsolete 1.024 kbit 4 256X4 OTHER DRAM 256 256 words PMOS COMMERCIAL EXTENDED R-PDIP-T18 Not Qualified e0 80 °C 10 °C 18 PLASTIC/EPOXY DIP DIP18,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL INTEL CORP DIP, DIP18,.3 unknown EAR99 8542.32.00.02
MYX4DD3512M72PBG2R-ET
Micross Components
Check for Price Yes Active 38.6547 Gbit 72 512MX72 1.35 V 125 ns 667 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.15 mA 1.45 V 1.283 V CMOS R-PBGA-B375 105 °C -40 °C 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
MYX4DD3512M72PBG2-XT
Micross Components
Check for Price No Active 38.6547 Gbit 72 512MX72 1.35 V 125 ns 667 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.15 mA 1.45 V 1.283 V CMOS R-PBGA-B375 125 °C -55 °C 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
MYX4DD3512M72PBG2R-IT
Micross Components
Check for Price Yes Active 38.6547 Gbit 72 512MX72 1.35 V 125 ns 667 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.15 mA 1.45 V 1.283 V CMOS R-PBGA-B375 85 °C -40 °C 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
MYX4DD3512M72PBG2-IT
Micross Components
Check for Price No Active 38.6547 Gbit 72 512MX72 1.35 V 125 ns 667 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.15 mA 1.45 V 1.283 V CMOS R-PBGA-B375 85 °C -40 °C 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
MYX4DD3512M72PBG2-ET
Micross Components
Check for Price No Active 38.6547 Gbit 72 512MX72 1.35 V 125 ns 667 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.15 mA 1.45 V 1.283 V CMOS R-PBGA-B375 105 °C -40 °C 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
MYX4DD3512M72PBG2-XX
Micross Components
Check for Price No Active 38.6547 Gbit 72 512MX72 1.35 V 100 ns 800 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.35 mA 1.45 V 1.283 V CMOS R-PBGA-B375 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
MYX4DD3512M72PBG2R-XX
Micross Components
Check for Price Yes Active 38.6547 Gbit 72 512MX72 1.35 V 100 ns 800 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.35 mA 1.45 V 1.283 V CMOS R-PBGA-B375 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
MYX4DD3512M72PBG2R-XT
Micross Components
Check for Price Yes Active 38.6547 Gbit 72 512MX72 1.35 V 125 ns 667 MHz MULTI BANK PAGE BURST DDR3 DRAM SEATED HGT-CALCULATED COMMON 8 1 1 512 536.8709 M SYNCHRONOUS 3-STATE YES 8 75 µA 1.15 mA 1.45 V 1.283 V CMOS R-PBGA-B375 125 °C -55 °C 375 PLASTIC/EPOXY BGA BGA375,18X21,40 RECTANGULAR GRID ARRAY YES BALL 1 mm BOTTOM 2.96 mm 21.625 mm 19.125 mm MICROSS COMPONENTS , compliant EAR99
TMS1103-1NL
Texas Instruments
Check for Price No Obsolete 1.024 kbit 1 1KX1 150 ns 32 SEPARATE 1000 1.024 k 68 µA MOS COMMERCIAL R-PDIP-T18 Not Qualified 55 °C NOT SPECIFIED NOT SPECIFIED 18 PLASTIC/EPOXY DIP DIP18,.3 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL TEXAS INSTRUMENTS INC DIP, DIP18,.3 not_compliant EAR99 8542.32.00.02