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MTC16C2085S1UC56BA1
Micron Technology Inc
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Check for Price | Active | 274.8779 Gbit | 64 | 4GX64 | 1.1 V | 2.8011 GHz | DUAL BANK PAGE BURST | DDR5 DRAM MODULE | SELF REFRESH | 1 | 1 | 4000000000 | 4.295 G | SYNCHRONOUS | YES | CMOS | R-XDMA-N288 | 95 °C | 288 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | MICRON TECHNOLOGY INC | UDIMM-288 | compliant | ||||||||||||||||||||||||||
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CT16G4DFD8266
Micron Technology Inc
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Check for Price | Active | 137.439 Gbit | 64 | 2GX64 | 1.2 V | 2.666 GHz | DDR4 DRAM MODULE | COMMON | 1 | 1 | 2000000000 | 2.1475 G | SYNCHRONOUS | NO | 48 mA | 2.2 mA | 1.26 V | 1.14 V | CMOS | OTHER | R-XDMA-N288 | 85 °C | 288 | UNSPECIFIED | DIMM | DIMM288,33 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 850 µm | DUAL | 31.25 mm | 133.35 mm | 3.9 mm | MICRON TECHNOLOGY INC | UDIMM | unknown | EAR99 | 8542.32.00.36 | 2020-05-06 | ||||||||||||||
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MTC4C10163S1SC48BA1
Micron Technology Inc
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$46.2972 | End Of Life | 68.7195 Gbit | 64 | 1GX64 | 1.1 V | 2.4038 GHz | SINGLE BANK PAGE BURST | DDR5 DRAM MODULE | SELF REFRESH | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | YES | 65 mA | 778 µA | CMOS | R-XDMA-N262 | 95 °C | 262 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | MICRON TECHNOLOGY INC | SODIMM-262 | compliant | Micron | |||||||||||||||||||||||
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MTC16C2085S1UC48BA1
Micron Technology Inc
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$156.0977 | End Of Life | 274.8779 Gbit | 64 | 4GX64 | 1.1 V | 2.4038 GHz | DUAL BANK PAGE BURST | DDR5 DRAM MODULE | SELF REFRESH | 1 | 1 | 4000000000 | 4.295 G | SYNCHRONOUS | YES | 86 mA | 993 µA | CMOS | R-XDMA-N288 | 95 °C | 288 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | MICRON TECHNOLOGY INC | UDIMM-288 | compliant | Micron | |||||||||||||||||||||||
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MT60B2G8HB-48B:A
Micron Technology Inc
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$16.2234 | End Of Life | 17.1799 Gbit | 8 | 2GX8 | 1.1 V | 2.4038 GHz | 8192 | MULTI BANK PAGE BURST | DDR5 DRAM | SELF REFRESH | COMMON | 1 | 1 | 2000000000 | 2.1475 G | SYNCHRONOUS | 3-STATE | YES | CMOS | R-PBGA-B82 | 95 °C | 82 | PLASTIC/EPOXY | VFBGA | BGA82,11X13,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 11 mm | 9 mm | MICRON TECHNOLOGY INC | compliant | Micron | ||||||||||||||||||
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MT60B1G16HC-48B:A
Micron Technology Inc
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$11.1899 | End Of Life | 17.1799 Gbit | 16 | 1GX16 | 1.1 V | 2.4038 GHz | 8192 | MULTI BANK PAGE BURST | DDR5 DRAM | SELF REFRESH | COMMON | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | 3-STATE | YES | CMOS | R-PBGA-B102 | 95 °C | 102 | PLASTIC/EPOXY | VFBGA | BGA102,9X17,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 14 mm | 9 mm | MICRON TECHNOLOGY INC | compliant | Micron | ||||||||||||||||||
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MT53E1536M32D4DT-046AIT:A
Micron Technology Inc
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Check for Price | Yes | Obsolete | 51.5396 Gbit | 32 | 1536MX32 | 1.8 V | 2.1367 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | COMMON | 16,32 | 1 | 1 | 1536000000 | 1.6106 G | SYNCHRONOUS | YES | 16,32 | 1.95 V | 1.7 V | CMOS | R-PBGA-B200 | 95 °C | -40 °C | AEC-Q100 | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 950 µm | 14.5 mm | 10 mm | MICRON TECHNOLOGY INC | VFBGA-200 | compliant | |||||||||||||
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W66BP6NBUAHJ
Winbond Electronics Corp
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Check for Price | Active | 2.1475 Gbit | 16 | 128MX16 | 1.1 V | 2.1367 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX | COMMON | 16,32 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 16,32 | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 105 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 800 µm | 14.5 mm | 10 mm | WINBOND ELECTRONICS CORP | , | unknown | EAR99 | 8542.32.00.36 | 2020-06-23 | Winbond | |||||||||||
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W66CP2NQUAHJ
Winbond Electronics Corp
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Check for Price | Active | 4.295 Gbit | 32 | 128MX32 | 1.1 V | 2.1367 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX | COMMON | 16,32 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 16,32 | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 105 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 800 µm | 14.5 mm | 10 mm | WINBOND ELECTRONICS CORP | , | unknown | EAR99 | 8542.32.00.36 | 2020-06-23 | ||||||||||||
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W66BL6NBUAHI
Winbond Electronics Corp
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Check for Price | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.1 V | 2.1367 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | AUTO/SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY VOLTAGE | COMMON | 16,32 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 16,32 | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 95 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X20,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 800 µm | 14.5 mm | 10 mm | WINBOND ELECTRONICS CORP | compliant | EAR99 | 8542.32.00.36 | Winbond |