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M52S128168A-7TG
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 2.5 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2 | TSOP2, | 54 | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||
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GMM7734210CS-7
LG Semicon Co Ltd
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Check for Price | Obsolete | 301.9899 Mbit | 72 | 4MX72 | 5 V | 70 ns | FAST PAGE WITH EDO | EDO DRAM MODULE | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 1 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDMA-N168 | Not Qualified | 70 °C | 168 | UNSPECIFIED | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | LG SEMICON CO LTD | DIMM-168 | unknown | |||||||||||||||||||||||||||
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KM48V8104BK-45
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 45 ns | 4096 | FAST PAGE WITH EDO | EDO DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | 500 µA | 130 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | 3.76 mm | 20.96 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | SOJ | SOJ, SOJ32,.44 | 32 | unknown | EAR99 | 8542.32.00.02 | |||||||||
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GM71VS65403CLJ-5
LG Semicon Co Ltd
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Check for Price | No | Obsolete | 67.1089 Mbit | 4 | 16MX4 | 3.3 V | 50 ns | 4096 | FAST PAGE WITH EDO | EDO DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION | COMMON | 1 | 1 | 16000000 | 16.7772 M | ASYNCHRONOUS | 3-STATE | YES | 300 µA | 140 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | LG SEMICON CO LTD | unknown | ||||||||||||||||
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KM416S8030BT-GL
Samsung Semiconductor
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Check for Price | No | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 6 ns | 100 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 1 | 2 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | 1,2,4,8,FP | 1 mA | 210 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e0 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP54,.46,32 | 54 | unknown | EAR99 | 8542.32.00.02 | |||||||
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MSM51C464A-10ZS
OKI Electric Industry Co Ltd
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Check for Price | Obsolete | 262.144 kbit | 4 | 64KX4 | 5 V | 100 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PZIP-T19 | Not Qualified | 70 °C | 19 | PLASTIC/EPOXY | ZIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 1.27 mm | ZIG-ZAG | 10.16 mm | 25.5 mm | 2.8 mm | OKI ELECTRIC INDUSTRY CO LTD | ZIP | ZIP, | 20 | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||
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AM90CL257-12PC
AMD
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Check for Price | Obsolete | 262.144 kbit | 1 | 256KX1 | 5 V | 120 ns | 256 | STATIC COLUMN | STATIC COLUMN DRAM | RAS ONLY REFRESH | 1 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T16 | Not Qualified | 70 °C | 16 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 7.62 mm | ADVANCED MICRO DEVICES INC | DIP | DIP, | 16 | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||
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KM44C256BLP-8
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 4 | 256KX4 | 5 V | 80 ns | 512 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | 200 µA | 70 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T20 | Not Qualified | e0 | 70 °C | 20 | PLASTIC/EPOXY | DIP | DIP20,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.65 mm | 24.56 mm | 7.62 mm | SAMSUNG SEMICONDUCTOR INC | DIP | DIP, DIP20,.3 | 20 | unknown | EAR99 | 8542.32.00.02 | ||||||||
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MT47H64M16HR-187ELAT:H
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 3.5 ns | 533 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 7 mA | 300 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 105 °C | -40 °C | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA84,9X15,32 | 84 | compliant | EAR99 | 8542.32.00.32 | |||
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MYX4DD3K512M64PBG2-15XT
Micross Components
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Check for Price | Active | 38.6547 Gbit | 72 | 512MX72 | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH; SEATED HT-CALCULATED | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | CMOS | R-PBGA-B375 | 375 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | 2.96 mm | 21.5 mm | 19 mm | MICROSS COMPONENTS | BGA, | compliant | EAR99 | 8542.32.00.36 | 2018-11-02 |